Vacuum Pump

US20160138602A1Active Publication Date: 2016-05-19EDWARDS JAPAN
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Patent Information

Authority / Receiving Office
US Β· United States
Current Assignee / Owner
EDWARDS JAPAN
Publication Date
2016-05-19

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Abstract

A vacuum pump is provided, which suppresses occurrence of a gas product in an exhaust side outlet of a thread groove and maintains pump performance over a long period. The vacuum pump includes inflow suppressing walls formed by widening greater an exhaust side end portion of ridge portions, extended along a gas exhaust direction on an outer circumferential surface of an inner circumference side stator, forward in a rotor rotating direction than an intake side end portion, the inflow suppressing walls suppressing retention of gas in exhaust side outlets of thread grooves engraved among the ridge portions.
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Description

CROSS-REFERENCE TO RELATED APPLICATION

[0001] This application is a Section 371 National Stage Application of International Application No. PCT / JP2014 / 065156, filed Jun. 6, 2014, which is incorporated by reference in its entirety and published as WO2015 / 001911 on Jan. 8, 2015 and which claims priority of Japanese Application No. 2013-141863, filed Jul. 5, 2013.FIELD OF THE INVENTION

[0002] The present invention relates to a vacuum pump and, more particularly, to a vacuum pump usable in a pressure range from a medium vacuum to an ultra-high vacuum.BACKGROUND OF THE INVENTION

[0003] When a semiconductor device such as a memory or an integrated circuit is manufactured, in order to avoid the influence due to dust and the like in the air, it is necessary to apply doping and etching to a high-purity semiconductor substrate (wafer) in a chamber in a high vacuum state. A vacuum pump such as a turbo molecular pump is used for exhaust in the chamber.

[0004] As such a vacuum pump, there is known a vac...

Claims

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