Resin composition, method for producing heat-resistant resin film, and display device
a technology of resin film and composition, which is applied in the direction of photomechanical equipment, photosensitive material processing, instruments, etc., can solve the problem that the degree of reduction in light transmittance of cured heat-resistant resin film is not considered to be sufficiently low, and achieves the improvement of the reliability of organic el display, the effect of reducing the transmittance and high sensitivity to ultraviolet ligh
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example 7
[0366]A polyamic acid ester (A1-1) (10 g), a phenolic resin (A3-1) (3 g), 4,4′,4″,4′″-(1,4-phenylenedimethylidene)tetrakisphenol (maximum absorption wavelength: 440 nm) (3.5 g) which was a thermally color-developing compound and the quinone diazide compound (C-1) (4.0 g) produced in Synthesis Example 8 were weighed and then dissolved in GBL (50 g) to produce a varnish of a polyimide precursor composition. The varnish was used to evaluate photosensitiveness, and the sensitivity was 120 mJ / cm2. The formation of scums was not observed after the development. The transmittance at a wavelength within the range from 350 to 460 nm after the heat treatment was 4.2% or less.
examples 8 to 27
, Comparative Examples 8 to 17
[0367]Varnishes were produced in the same procedure as in Example 7, except that the types and amounts of the compounds were as shown in Tables 5-1, 5-2 and 7. The names and the structures of the compounds shown in Tables 5-1 and 5-2 are as follows.
Component (F): HMOM-TPHAP (product name, manufactured by Honshu Chemical Industry Co., Ltd.)
[0368]Each of the varnishes was used to evaluate photosensitive and measure transmittances before and after a heat treatment. The evaluation results are shown in Tables 6 and 8.
TABLE 5Components of resin compositionComponentComponentComponentComponentSolvent(A1, A2)(A3)(B)(C)(D)Others(content)(content)(content)(content)(content)(content)Example 7PolyamicPhenolic resin4,4′,4″,4″′-(1,4-phenylene-quinonediazideGBL—acid aster(A3-1) (3 g)dimethylidene)tetrakisphenolcompound(50 g)(A1-1) (10 g)(absorption maximum(C-1) (4 g)wavelength: 440 nm)(3.5 g)Example 8PolyamicPhenolic resin4-[bis (4-hydroxy-quinonediazideGBL—acid ester(...
example 28
[0371]Bottom-gate-type oxide TFTs, which were designed in such a manner as to have a resolution of 200 ppi, were formed on a glass substrate, and then an insulating film made from Si3N4 was formed in such a manner as to cover the TFTs. Subsequently, contact holes were formed in the insulating film, and then wiring lines (height: 1.0 μm), which were to be connected to the TFTs through the contact holes, were formed on the insulating film. The wiring lines were intended to connect the TFTs to each other or to connect the TFTs to organic EL elements which were formed in the latter step.
[0372]Subsequently, in order to planarize projections and depressions produced as the result of the formation of the wiring lines, a planarization film was formed on the insulating film in such a manner as to fill the projections and depressions produced as the result of the formation of the wiring lines. The formation of the planarization film on the insulating film was carried out by spin-coating a var...
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