Apparatus for manufacturing semiconductor device and method of manufacturing semiconductor device

a semiconductor device and manufacturing apparatus technology, applied in the direction of liquid surface applicators, liquid/solution decomposition chemical coatings, coatings, etc., can solve the problems of increasing equipment costs, increasing equipment costs, and increasing equipment costs. , to achieve the effect of improving equipment costs and excellent film thickness and quality uniformity

Active Publication Date: 2019-11-28
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention is aimed at providing a technique to form a plating film on the surface of a semiconductor wafer with uniform thickness and quality, while suppressing an increase in the cost of facilities. The invention achieves this by designing the ejection holes in the apparatus in such a way that the aperture ratio, i.e. the ratio of the size of the ejection holes to the distance from the first reservoir bath, is higher for the ejection holes located further away from the first reservoir bath. This results in a uniform solution flow velocity in the reaction bath, resulting in a plating film with consistent thickness and quality across the semiconductor wafer. The invention can achieve all this with a simple configuration, reducing the cost of facilities.

Problems solved by technology

Unfortunately, a Ni film, which is eroded to decrease during the solder bonding, is required to be not less than 2 μm.
Vacuum deposition methods such as evaporation and sputtering are slow in deposition rate and find difficulties in patterning to cause problems to persist in terms of productivity and manufacturing costs.
However, an attempt to provide the aforementioned structures results in the enormous size of the apparatus and the increase in costs of facilities.
However, in the technique disclosed in Japanese Patent Application Laid-Open No. 2014-234539, it is difficult for a bath including a one-sided outer bath to ensure the film thickness and quality uniformity of plating.
Also, this technique necessitates the provision of the air bubble vent portion that is a structure for venting air bubbles for the supply pipe and includes the bath including a four-sided outer bath to give rise to a problem that costs of facilities are increased.
For an increase in the amount of supplied reaction solution, there arises a need to upsize a pump, whereby the problem of the increase in costs of facilities is considered to result.

Method used

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  • Apparatus for manufacturing semiconductor device and method of manufacturing semiconductor device
  • Apparatus for manufacturing semiconductor device and method of manufacturing semiconductor device
  • Apparatus for manufacturing semiconductor device and method of manufacturing semiconductor device

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first preferred embodiment

[0028]A first preferred embodiment according to the present invention will now be described with reference to the drawings. FIG. 1 is a schematic view of a semiconductor device manufacturing apparatus according to the first preferred embodiment of the present invention, and is a sectional view taken in a direction parallel to the long edges of a reaction bath 2. FIG. 2 is a schematic view showing an arrangement of ejection holes 4a in a supply pipe 4 provided in the semiconductor device manufacturing apparatus. FIG. 3 is a schematic view showing another arrangement of the ejection holes 4a in the supply pipe 4 provided in the semiconductor device manufacturing apparatus.

[0029]In general, a chemical solution bath that performs electroless Ni plating includes a four-sided or two-sided reservoir bath. In the first preferred embodiment, the chemical solution bath includes a one-sided reservoir bath. As shown in FIG. 1, a film deposition apparatus 1 that is the semiconductor device manuf...

second preferred embodiment

[0079]Next, the semiconductor device manufacturing apparatus according to a second preferred embodiment will be described. FIG. 13 is a schematic view showing a relationship between a plurality of supply pipes 4 and the outer bath 3 provided in a film deposition apparatus 1B which is the semiconductor device manufacturing apparatus according to the second preferred embodiment, and is a sectional view taken in a horizontal direction between the supply pipes 4 and the flow straightener 7. FIG. 14 is a schematic view showing a relationship between another plurality of supply pipes 4 and the outer bath 3 provided in a film deposition apparatus 1C according to the second preferred embodiment, and is a sectional view taken in a horizontal direction between the supply pipes 4 and the flow straightener 7. In the second preferred embodiment, components similar to those of the first preferred embodiment are designated by the same reference numerals and characters, and will not be described.

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Abstract

There is provided a technique capable of forming a plating film excellent in film thickness and quality uniformity on a to-be-plated surface of a semiconductor wafer while suppressing an increase in costs of facilities. An apparatus for manufacturing a semiconductor device includes: a reaction bath; a supply pipe provided inside the reaction bath and including a plurality of ejection holes for ejecting the reaction solution, the ejecting holes being arranged in a longitudinal direction of the supply pipe; and an outer bath serving as a reservoir bath provided adjacent to the reaction bath on a first end side of the supply pipe and storing therein the reaction solution overflowed the reaction bath. The aperture ratio of part of the ejection holes more distant from the outer bath is at least partially higher than that of part of the ejection holes closer to the outer bath.

Description

BACKGROUND OF THE INVENTIONField of the Invention[0001]The present invention relates to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method which use an electroless plating process to form a plating film excellent in film thickness and quality uniformity on a to-be-plated surface of a semiconductor wafer.Description of the Background Art[0002]In power semiconductor devices, e.g. power devices such as IGBTs (insulated-gate bipolar transistors) and MOSFETs (metal oxide semiconductor field-effect transistors), the process of making semiconductor substrates thinner has been performed to improve current-carrying performance typified by on-state characteristics and the like. In recent years, semiconductor devices have been manufactured using an ultrathin wafer process that achieves size reduction to approximately 50 μm for the purpose of improving manufacturing costs and characteristics.[0003]For mounting such a front and back conducting type pow...

Claims

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Application Information

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IPC IPC(8): C23C18/16C23C18/18H01L21/02H01L21/288
CPCH01L21/288H01L21/02068C23C18/1628C23C18/1862C23C18/34C23C18/1664H01L21/67011H01L21/4814C23C18/54C23C18/42C23C18/1848C23C18/1651H01L21/76874B05C11/10B05C3/02C25D5/08
InventorNAKAMURA, SHOTARO
OwnerMITSUBISHI ELECTRIC CORP