Phase change memory with improved recovery from element segregation

Active Publication Date: 2020-03-19
IBM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, element segregation can occur

Method used

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  • Phase change memory with improved recovery from element segregation
  • Phase change memory with improved recovery from element segregation
  • Phase change memory with improved recovery from element segregation

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Embodiment Construction

[0020]Embodiments in accordance with the present invention provide methods and devices for dealing with element segregation issues of phase change elements by incorporating an electrically conductive and chemically stable material inside the phase change element. The term “element segregation” refers to elements that are spatially segregated or separated within a region. The electrically conductive and chemically stable material can be, e.g., titanium nitride (TiN), and the phase change element can be, e.g., a Ge—Sb—Te (germanium-antimony-tellurium or GST) material. All the phase change materials (PCMs) are the same in the PCM structures of the exemplary embodiments.

[0021]Embodiments in accordance with the present invention provide methods and devices for employing phase change based materials in memory cells. Phase change materials, such as chalcogenides, can be caused to change phase between an amorphous state and a crystalline state by application of electrical current at levels ...

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Abstract

A method is presented for reducing element segregation of a phase change material (PCM). The method includes forming a bottom electrode, constructing a layered stack over the bottom electrode, the layered stack including the PCM separated by one or more electrically conductive and chemically stable materials, and forming a top electrode over the layered stack. The PCM is Ge—Sb—Te (germanium-antimony-tellurium or GST) and the one or more electrically conductive and chemically stable materials are titanium nitride (TiN) segments.

Description

BACKGROUNDTechnical Field[0001]The present invention relates generally to semiconductor devices, and more specifically, to phase change memory with improved recovery from element segregation.Description of the Related Art[0002]A phase change memory is one of next-generation nonvolatile memory devices that are expected to meet an increasing demand for a high-performance and low-power semiconductor memory device. In phase change memory devices, data can be stored or erased by heating or cooling a phase change layer therein. However, element segregation can occur during phase-change memory operation.SUMMARY[0003]In accordance with an embodiment, a method is provided for reducing element segregation of a phase change element. The method includes forming a bottom electrode, constructing a layered stack over the bottom electrode, the layered stack including the PCM separated by one or more electrically conductive and chemically stable materials, and forming a top electrode over the layere...

Claims

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Application Information

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IPC IPC(8): H01L27/24H01L45/00
CPCH01L27/2481H01L45/1616H01L45/144G11C13/0097H01L45/06G11C13/0004H10B63/80H10N70/231H10N70/8828H10N70/026H10N70/063H10B63/84H10N70/023
Inventor CHENG, KANGGUO
Owner IBM CORP
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