Dielectric reflector for amorphous silicon crystallization
a technology of dielectric reflector and amorphous silicon, which is applied in the direction of instruments, semiconductor devices, optics, etc., can solve the problems of reducing the mobility of peripheral circuit tfts, undesirably requiring additional masks and implantation processes and equipment, and not conducive to making tfts with low leakage current characteristics
Active Publication Date: 2007-02-27
AU OPTRONICS CORP
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Benefits of technology
"The invention relates to a method of making a liquid crystal display device by creating a polysilicon layer with different grain sizes using a light reflecting layer. This results in a display device with improved image quality and reduced power consumption. The technical effect of this invention is to improve the quality and performance of liquid crystal display devices."
Problems solved by technology
However, because the polysilicon grains are large, the polysilicon is not conducive to making TFTs with low leakage current characteristics.
Such structures, however, undesirably require additional mask and implantation processes and equipment.
In addition, these structures reduce the device mobility of the peripheral circuit TFTs.
Method used
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[0014]Referring to FIG. 1A, an insulating substrate 10 is provided which will form an LCD panel of an active matrix LCD device. The substrate 10 is made, for example, of glass and includes a pixel region 12 upon which pixel TFTs will be formed and a peripheral circuit region 14 upon which driver and other TFTs will be formed. A buffer layer 20 made of one or more films of dielectric material, such as silicon oxide, silicon nitride and combinations thereof, is formed over the substrate 10. The films of the buffer layer 20 may be formed using, for example, a chemical vapor deposition process and / or a physical vapor deposition process, and may have a thickness ranging between about 0.15 microns and about 0.3 microns.
[0015]In FIG. 1B, a semiconductor layer 30 of amorphous silicon (a-Si) is formed over the buffer layer 20. The a-Si layer 30 may be formed using a chemical vapor deposition or physical vapor deposition process, and may have a thickness ranging between about 0.04 microns and...
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Abstract
A method of forming a liquid crystal display device includes forming an amorphous silicon layer over a substrate and forming a light reflecting layer only over a first portion of the amorphous silicon layer. The amorphous silicon layer is then irradiated with a laser to convert it to a polysilicon layer. The light reflecting layer partially reflects the light away from the first portion of the amorphous silicon layer such that a first portion of the polysilicon layer has a first polysilicon grain size and a second portion of the polysilicon layer has a second polysilicon grain size, which is larger than the first polysilicon grain size. A first plurality of thin film transistors having reduced leakage current characteristics may then be formed from the first portion of the polysilicon layer.
Description
FIELD OF THE INVENTION[0001]The present invention relates to an active matrix liquid crystal display and method of forming the same. In particular, the present invention relates to a liquid crystal display having low temperature polysilicon pixel thin film transistors with reduced leakage current and method of forming the same.BACKGROUND OF THE INVENTION[0002]An active matrix liquid crystal display (LCD) typically comprises a glass or quartz substrate having formed thereon a plurality of pixel electrodes and switching devices. The pixels are defined by connected gate lines and data lines. Each pixel comprises a storage capacitor and a pixel electrode connected to the switching devices. An LCD employing thin film transistors (TFTs) as the pixel switching devices, provides advantages of low power consumption, thin profile, light weight and low driving voltage. With applications in desktop computer and other monitors, and notebooks, TFT LCDs are presently the most common type of displa...
Claims
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IPC IPC(8): G02F1/136G02F1/133G02F1/1362G09G3/36H01L21/20H01L21/336H01L21/77H01L21/8234H01L21/8238H01L21/84H01L27/08H01L27/088H01L27/092H01L27/12H01L29/786
CPCG02F1/13454H01L27/1281H01L29/78675H01L27/12
Inventor PENG, CHIA-TIEN
Owner AU OPTRONICS CORP