Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Trench capacitor of a DRAM and fabricating method thereof

a technology of dram and clamp capacitor, which is applied in the direction of semiconductor devices, electrical devices, transistors, etc., can solve the problems of increasing the number of technical problems encountered in the fabrication of both types of dram, limiting and increasing the amount of memory needed to operate software at an alarming rate. , to achieve the effect of increasing the level of device integration and a larger processing window

Active Publication Date: 2008-08-05
MARLIN SEMICON LTD
View PDF9 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0008]Accordingly, at least one objective of the present invention is to provide a trench capacitor and fabricating method thereof for increasing the level of integration of devices and providing a larger processing window.

Problems solved by technology

On the other hand, with the ever-increasing size of computer application software, the amount of memory needed to operate the software also increases at an alarming rate.
With the constant pressure for reducing the dimension of semiconductor devices, an increasing number of technical problems are encountered in the fabrication of both types of DRAM.
However, the aforementioned disposition of the DRAM capacitor limits the level of device integration.
In other words, the level of integration can hardly increase even if the technique for producing finer lines is continuously improved because of the aforementioned spatial constraint for the memory.
As a result, fabricating more devices within a limited space and increasing the spatial utilization of a wafer is an issue that every semiconductor manufacturer concerns.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Trench capacitor of a DRAM and fabricating method thereof
  • Trench capacitor of a DRAM and fabricating method thereof
  • Trench capacitor of a DRAM and fabricating method thereof

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0036]FIGS. 4A through 4E are schematic cross-sectional views showing the steps for fabricating a DRAM according to one preferred embodiment of the present invention. First, as shown in FIG. 4A, a substrate 300 is provided. The substrate has at least an isolation structure 302 formed thereon. The substrate 300 is a silicon substrate and the isolation structure 302 is a shallow trench isolation (STI) structure fabricated using silicon oxide, for example.

[0037]Then, trenches 304a and 304b are formed in the substrate 300 beside the isolation structure 302. The trenches 304a and 304b are formed, for example, by performing a patterning process using a mask layer. In one embodiment, the trenches 304a and 304b penetrate through the isolation structure 302. The dash line portion represents that portion of the isolation structure 302 is removed in the process of forming the trenches 304a and 304b.

[0038]After that, a first lower electrode 306a and a second lower electrode 306b are formed in ...

second embodiment

[0048]FIGS. 5A through 5E are schematic cross-sectional views showing the steps for fabricating a DRAM according to another preferred embodiment of the present invention. First, as shown in FIG. 5A, a substrate 400 is provided. The substrate has at least an isolation structure 402 formed thereon. The substrate 400 is a silicon substrate and the isolation structure 402 is a shallow trench isolation (STI) structure fabricated using silicon oxide, for example.

[0049]Trenches 404a and 404b are formed in the substrate 400 beside the isolation structure 402 and then a portion of the isolation structure 402 between the trenches 404a and 404b is removed to form an opening 406. The trenches 404a and 404b and the opening 406 are formed, for example, by performing a patterning process using a mask layer. In one embodiment, the trenches 404a and 404b penetrate through the isolation structure 402. The dash line portion represents that portion of the isolation structure 402 is removed in the proce...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method of fabricating trench capacitors is described. A substrate having at least one isolation structure is provided. A first trench and a second trench are formed in the substrate beside the isolation structure. A first lower electrode and a second lower electrode are formed in the substrate around the first trench and the second trench. A first capacitor dielectric layer and a second capacitor dielectric layer are formed on the respective surfaces of the first trench and the second trench. A first upper electrode and a second upper electrode are formed to fill the first trench and the second trench. A portion of the isolation structure between the first trench and the second trench is removed to form an opening. A conductive layer is formed to fill the opening and connect electrically with the first upper electrode and the second upper electrode.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a dynamic random access memory (DRAM). More particularly, the present invention relates to a trench capacitor of a DRAM and fabricating method thereof.[0003]2. Description of the Related Art[0004]As semiconductor finally enters the deep sub-micron regime, the dimensions of each device are significantly reduced. This means that the area for accommodating the capacitors of a DRAM is correspondingly reduced. On the other hand, with the ever-increasing size of computer application software, the amount of memory needed to operate the software also increases at an alarming rate. Such conflicting demand for a smaller dimension and a larger memory storage capacity implies that the former method of fabricating the capacitors of a DRAM must be modified to fit this trend.[0005]According to the structure of capacitor, the DRAM can be classified into two major types, namely, the stack capacitor DRAM ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(United States)
IPC IPC(8): H01L21/8242
CPCH01L21/823807H01L21/823864H01L29/7843H01L29/66181H01L27/1087H10B12/0387
Inventor SU, YI-NANHUANG, JUN-CHI
Owner MARLIN SEMICON LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com