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Impedance matching device

a technology of impedance matching and matching circuit, which is applied in the direction of fixed inductance, inductance, electrical equipment, etc., can solve the problems of increasing production cost, complicating manufacturing process, and requiring small impedance matching circuit size, and achieve large current tolerance and small variation in quality

Inactive Publication Date: 2014-11-04
NGK INSULATORS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention is for a small device that matches the resistance of electrical components. It is designed to provide high-quality connections with minimal variation in quality and can handle high levels of current.

Problems solved by technology

However, since an impedance matching circuit is often mounted within a package for protecting a semiconductor element, an impedance matching circuit is required to be small-sized.
In addition, since the large number of components tends to complicate manufacturing process and increase production cost, it is required to suppress the number of components from such a viewpoint.
Accordingly, in order to achieve desired inductance, it is necessary to precisely control the length or curvature of the thin line, and this is also one of the causes complicating manufacturing process and increasing production cost (for example, refer to Patent Documents 1 and 2).
However, in accordance with the method as described above, while downsizing of an impedance matching device can be achieved, it is difficult to form a conductor pattern with a sufficient thickness to achieve large-current tolerance since the conductor pattern is squashed or deformed when the green sheets with a conductor pattern screen-printed thereon are laminated.
In addition, there are problems that a sharp edge portion resulting from the squash or deformation on lamination leads to concentration of electric current due to concentration of electric field and, especially when the thickness of a conductor pattern is large, a void between the green sheets adjacent to the conductor pattern leads to decrease in mechanical strength due to concentration of stress (for example, refer to Patent Documents 1 and 2).

Method used

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Examples

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example

(1) Explanation Based on an Equivalent Circuit

[0119]FIG. 1 is an equivalent circuit schematic showing the configuration of an impedance matching device according to the present example. Components inside the tetragonal frame depicted with dotted line in FIG. 1 represent components included in the impedance matching device according to the present example. Namely, in FIG. 1, L1 and L6 are components not included in the impedance matching device according to the present example, and specifically represent metal wires for connecting the impedance matching device according to the present example and another device (for example, an external circuit such as high frequency wave semiconductor amplifier).

[0120]On the other hand, L4 and L5 represent inductor portions embedded inside the first dielectric material D1 (not shown in FIG. 1) in the impedance matching device according to the present example. To the portion where the inductor portions L4 and L5 are connected, the capacitor portion C...

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Abstract

The present invention intends to provide a small-sized impedance matching device with a small variation in quality and large-current tolerance. The above described intention of the present invention is achieved by an impedance matching device, which comprises a wiring portion comprising a conductor pattern for wiring, embedded inside or formed on the surface of first dielectric material, and either one or both of an inductor portion comprising a conductor pattern for inductor, embedded inside or formed on the surface of the first dielectric material, or a capacitor portion comprising at least one pair of conductor patterns for capacitor and second dielectric material with a dielectric constant larger than that of the first dielectric material, existing between the pair of conductor patterns for capacitor wherein the thicknesses of the conductor pattern for wiring and the conductor pattern for inductor are 20 μm or more.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to an impedance matching device. Specifically, the present invention relates to a small-sized impedance matching device with a small variation in quality and large-current tolerance.[0003]2. Description of Related Art[0004]In general, since the output impedance of a semiconductor element consisting of silicon (Si), gallium nitride (GaN) or the like is small, such a semiconductor element is often connected with a circuit for matching impedance when it is connected with an external circuit. Such a semiconductor element is connected with an impedance matching circuit to be capable of matching a characteristic impedance of an external circuit and transmitting the output from the semiconductor element.[0005]The above-described impedance matching circuit is often constituted by a capacitor element and an inductor element consisting of a thin line of conductor connecting the capacitor element and ...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H03H7/38H01F17/00H01F17/02
CPCH01F17/02H01F2017/0026H03H7/38
Inventor HIRAI, TAKAMINAMERIKAWA, MASAHIKOYANO, SHINSUKE
Owner NGK INSULATORS LTD
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