Positive photosensitive resin composition and method for forming patterns by using the same

a technology of resin composition and photosensitive resin, which is applied in the direction of photomechanical equipment, instruments, optics, etc., can solve the problems of reducing the resolution of the subsequent lithography process, the photoresist layer cannot block the reflected light of the metal circuit, and the photoresist pattern adhered to the metal circuit is easily decolored

Active Publication Date: 2015-11-17
CHI MEI CORP
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0010]Another aspect of the present invention provides a method for forming patterns which subjects the above-mentioned positive photosensitive resin composition into a prebake step, an exposure step, a development step and a postbake step, so as to form patterns on a substrate. Since the above-mentioned positive photosensitive resin composition can be formed to colorfully fine patterns on metal circuits, such patterns are not decolored after being etched (or called as post-etch decolored), thereby beneficially blocking the reflected light of the metal circuits.
[0075]When the positive photosensitive resin composition uses the phthalocyanine dye (C-3), the pattern formed subsequently may have better resolution.
[0104]Thereinafter, various applications of the present invention will be described in more details referring to several exemplary embodiments below, while not intended to be limiting. Thus, one skilled in the art can easily ascertain the essential characteristics of the present invention and, without departing from the spirit and scope thereof, can make various changes and modifications of the invention to adapt it to various usages and conditions.

Problems solved by technology

However, in the prior art, after the metal circuits are etched, it is often found problems that the photoresist patterns adhered on the metal circuits are decolored easily or insufficient to light shielding rate, which cause that the photoresist layer cannot block the reflected light of the metal circuits.
Particularly, in a process of a semiconductor integrated circuit device, a thin film transistor-liquid crystal display (TFT-LCD) device or a touch panel, if the photoresist patterns are decolored easily or insufficient to light shielding rate, the photoresist layer cannot block the reflected light of the metal circuits, thereby reducing the resolution of the subsequent lithography process.
However, when the hydroxy-type novolac resin (A-1) is not used in the positive photosensitive resin composition, the resulted colorfully fine patterns have problems such as decolorization and poor resolution after being etched.
When there is neither the at least one (C-1) selected from the group consisting of the diazo dye nor the anthraquinone dye and the chromium (III, Cr3+) azo dye, or the triarylmethane dye (C-2) in the positive photosensitive resin composition, the pattern formed subsequently by such composition may have the problems such as bad resolution, insufficient film-remaining ratio and the like.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Positive photosensitive resin composition and method for forming patterns by using the same
  • Positive photosensitive resin composition and method for forming patterns by using the same
  • Positive photosensitive resin composition and method for forming patterns by using the same

Examples

Experimental program
Comparison scheme
Effect test

synthesis example a-1-1

[0109]A 1000 mL four-necked conical flask equipped with a nitrogen inlet, a stirrer, a heater, a condenser and a thermometer was purged with nitrogen, and the following components were charged to the flask. The aforementioned components comprising 0.70 moles of m-cresol, 0.30 moles of p-cresol, 0.5 moles of 3,4-dihydroxybenzaldehyde and 0.020 moles of oxalic acid were stirred slowly and heated to 100° C., so as to carry out polycondensation for 6 hours. Next, the reaction was heated again to 180° C. and then dried under a decreased pressure at 10 mmHg for evaporating the solvent, thereby obtaining a hydroxy-type novolac resin (A-1-1).

synthesis examples a-1-2

to A-1-5

[0110]Synthesis Examples A-1-2 to A-1-5 were practiced with the same method as in Synthesis Example A-1-1 by using different kinds and different amounts of the components of the hydroxy-type novolac resin (A-1). The formulations of Synthesis Examples A-1-2 to A-1-5 were also listed in TABLE 1 rather than focusing or mentioning them in details.

synthesis examples a-2-1

to A-2-3

[0111]Synthesis Examples A-2-1 to A-2-3 were practiced with the same method as in Synthesis Example A-1 by using different kinds and different amounts of the components of the other hydroxy-type novolac resin (A-2). The formulations of Synthesis Examples A-2-1 to A-2-3 were also listed in TABLE 1 rather than focusing or mentioning them in details.

Preparation of Positive Photosensitive Resin Composition

[0112]The following examples are directed to the preparation of the positive photosensitive resin composition of Examples 1 to 13 and Comparative Examples 1 to 6 according to TABLES 2 and 3.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
temperatureaaaaaaaaaa
temperatureaaaaaaaaaa
pressureaaaaaaaaaa
Login to view more

Abstract

The present invention relates to a positive photosensitive resin composition and a method for forming patterns by using the same. The positive photosensitive resin composition includes a novolac resin (A), an ortho-naphthoquinone diazide sulfonic acid ester (B), a dye (C) and a solvent (D). The novolac resin (A) further includes hydroxy-type novolac resin (A-1), which is synthesized by condensing hydroxylbenzaldehyde compound with aromatic hydroxyl compound. The dye (C) includes at least one (C-1) selected from the group consisting of diazo dye, anthraquinone dye and chromium (III, Cr3+) azo dye, as well as triarylmethane dye (C-2). Since the positive photosensitive resin composition can form colorfully fine patterns on metal circuits, and such patterns are not decolored after being etched, thereby beneficially blocking the reflected light of the metal circuits.

Description

RELATED APPLICATIONS[0001]This application claims priority to Taiwan Application Serial Number 101131364, filed on Aug. 29, 2012 which is herein incorporated by reference.BACKGROUND[0002]1. Field of Invention[0003]The present invention relates to a positive photosensitive resin composition and a method for forming patterns by using the same. More particularly, the present invention relates to a positive photosensitive resin composition for forming colorfully fine patterns on metal circuits, wherein such patterns are not decolored after being etched, thereby beneficially blocking the reflected light of the metal circuits during a manufacturing process of a semiconductor integrated circuit device, a thin film transistor-liquid crystal display (TFT-LCD) device or a touch panel.[0004]2. Description of Related Art[0005]Depending upon the microminiaturization of various electronic products in daily life, the demand for high resolution in various smart phones, slim TVs and microprocessors ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(United States)
IPC IPC(8): G03F7/023G02F1/136G03F7/20G03F7/022C08G8/24G03F7/038H01L29/786
CPCG03F7/022G02F1/136G03F7/0226G03F7/0236G03F7/20H01L29/786
Inventor CHEN, KAI-MINSHIH, CHUN-AN
Owner CHI MEI CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap