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Method for producing crystal structure electrode of oriented PZT capacitor

A technology of capacitors and crystal structures, applied in the direction of electric solid devices, circuits, electrical components, etc., can solve the problems of inability to prevent oxygen diffusion, inability to perform contact protection, etc.

Inactive Publication Date: 2007-09-12
瑞创国际公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Current platinum technology does not prevent oxygen from diffusing to the bottom electrode
Then, this also fails to protect the contact under the bottom electrode in the capacitor-on-plug FRAM(R) memory architecture.

Method used

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  • Method for producing crystal structure electrode of oriented PZT capacitor
  • Method for producing crystal structure electrode of oriented PZT capacitor
  • Method for producing crystal structure electrode of oriented PZT capacitor

Examples

Experimental program
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Embodiment Construction

[0032] Referring now to FIGS. 2-10 and 18, the bottom electrode structure for ferroelectric capacitors includes a close-packed hexagonal crystal seed layer and an iridium bottom electrode layer 22. The seed layer is deposited on the substrate 12 to form a layer about 200 angstroms thick. The iridium bottom electrode layer 22 is deposited on the surface of the seed layer to form a layer about 500-1000 angstroms thick. The seed layer can be composed of various materials, which will be further described below. An ideal seed layer has a swing curve with a half-width ("FWHM") (002 for a hexagonal crystal or 200 for a tetragonal crystal seed layer) less than five degrees. The "rocking curve" refers to the measurement of the diffraction intensity that changes with the rotation of the sample, and maintaining the Bragg conditions of the diffraction crystal plane when using X-ray and electron diffraction techniques to determine the direction of the deposited film. The half-width (FWHM) refe...

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PUM

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Abstract

A bottom electrode structure and manufacturing method is described for producing crystallographically textured iridium electrodes for making textured PZT capacitors that enables enhanced ferroelectric memory performance. The use of seed layers originating from hexagonal crystal structures with [0001] texture provides a smooth surface for growth of [111] textured iridium, which exhibits the face-centered cubic ('FCC') structure. This seeding technique results in [111] textured iridium with a small surface roughness relative to the film thickness. The highly textured iridium supports [111] textured PZT dielectric layer growth. Textured PZT exhibits enhanced switched polarization, reduced operating voltage and also improves the reliability of PZT capacitors used in FRAM(R) memory and other microelectronic devices.

Description

Technical field [0001] The present invention relates to ferroelectric capacitors and integrated circuit memory devices, and more particularly to oriented electrodes for ferroelectric capacitors. Background technique [0002] The term "structure" or "orientation" generally refers to the crystal orientation of the substance, and should not be confused with the surface smoothness of the substance. In particular, the orientation of the electrode and the dielectric substance in question refers to the crystal orientation of the substance on the "Z axis", and the substance orientation on the X axis or the Y axis (parallel to the surface of the integrated circuit) is generally not described. Because in fact, the crystal grain structure of the substance on the X or Y axis is usually arranged randomly, but these crystal grains are regularly arranged in the Z axis direction of the dominant orientation, which will make the material have the most optimized electrical pr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/10H01L21/28
Inventor 格伦·R·福克斯托马斯·达文波特
Owner 瑞创国际公司