Quantitative monitoring method and structure for plasma etching

Abstract

A method for quantitatively monitoring the plasma etching includes such steps as arranging a monitor structure with movable electrode and fixed electrode on the silicon chip to be etched, etching more times, and measuring the lateral attracting voltage between two electrodes to make the lateral attracting voltage close to the lateral attractive voltage relative to the etched quantity to be required. Three structures sensitive to over-etching are also disclosed.

Description

technical field [0001] The invention relates to a monitoring method and structure of a micro-electro-mechanical system (MEMS) processing technology, in particular to a method and a structure for quantitatively monitoring plasma etching in the processing of high aspect ratio microstructures. Background technique [0002] As an interdisciplinary advanced manufacturing technology, MEMS has played an important role in improving people's quality of life, improving people's living standards and enhancing national strength. Among the many MEMS processing technologies, the silicon process is gradually becoming the mainstream process. High aspect ratio silicon etching technology is one of the key processes of silicon MEMS technology. The inductively coupled plasma (ICP) etching system uses high-density plasma for etching, which can produce structures with a thickness of up to hundreds of microns. High aspect ratio MEMS devices (such as accelerometers, gyroscopes, resonators, etc.) a...

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Problems solved by technology

[0004] Gupta from the Massachusetts Institute of Technology (MIT) used the vertical pull-in voltage between the two-end fixed beam and the substrate to judge the etching situation, but the monitoring structure is not sensitive to over-etching.

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