Ferromagnetism semiconductive thin film of noncrystalline and high adulterated CoxTi1xO2, and preparation method
A semiconductor, highly doped technology, applied in the application of magnetic film to substrate, inorganic material magnetism, cathode sputtering application, etc. Magneto-resistance effect, good magneto-optical effect
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Embodiment 1
[0039] Example 1: Amorphous highly doped Co x Ti 1-x o 2 Ferromagnetic semiconductor thin film, x=0.56, namely Co 0.56 Ti 0.44 o 2 . It is an amorphous amorphous structure, as shown in Figure 1 and Figure 2.
[0040] The preparation method is as follows:
[0041] Use quartz glass substrates, first clean: put the substrate substrate into a mixture of chromic acid and sulfuric acid (a saturated solution formed by dissolving potassium dichromate in concentrated sulfuric acid), soak for about 5 hours, and use Rinse with deionized water. Then put the substrate into the electronic cleaning solution diluted with deionized water, and use ultrasonic cleaning for about 15 minutes to remove residual Cr and K plasma on the surface of the substrate, and rinse it with deionized water. Finally, the substrate was ultrasonically cleaned twice with absolute ethanol for 10 minutes each time. Before the substrate is used, the surface of the substrate is preliminarily inspected with a mic...
Embodiment 2
[0044] Example 2: Amorphous highly doped Co x Ti 1-x o 2 Ferromagnetic semiconductor thin film, x=0.45.
[0045] The cleaning of the quartz glass substrate is as described in Example 1.
[0046] Preparation method: use quartz glass as the substrate, place it in the preparation chamber of the radio frequency sputtering apparatus, and then vacuumize it. When the vacuum reaches 5×10 -6 Torr, argon and oxygen (pressure ratio 1:2) gas are introduced, when the system pressure is stabilized at 10 -3 When torr, start to deposit. On a quartz glass substrate at 150°C, a layer of 0.7nm TiO was sputtered by radio frequency 2 , DC sputtering a layer of 0.6nm Co, the deposition rates were 0.01nm / s, 0.04nm / s. The repetition period is 60, Co in TiO 2 The solid solubility in is 45%.
Embodiment 3
[0047] Example 3: Amorphous highly doped Co x Ti 1-x o 2 Ferromagnetic semiconductor thin film, x=0.41.
[0048] Preparation method: use (110) silicon single crystal as the substrate, the cleaning process is the same as that in Example 1, put it into the preparation chamber of the laser pulse deposition system, and then vacuumize. When the vacuum reaches 5×10 -6 When Torr, feed oxygen, when the system pressure is stable at 10 -3 When torr, start to deposit. On a water-cooled silicon substrate, alternately deposit a layer of 0.8nm TiO 2 , a layer of 0.6nm Co, the deposition rate is 0.03nm / s, 0.04nm / s respectively. The repetition period is 50, Co in TiO 2 The solid solubility in is 41%.
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