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Method for growing aluminum nitride with high quality on silicon substrate

An aluminum nitride, silicon substrate technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of poor crystal quality, affecting device performance, and uneven surface roughness

Inactive Publication Date: 2007-12-12
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the large lattice mismatch and thermal expansion coefficient mismatch between Si and AlN, the crystal quality of the AlN layer is poor, and the surface is rough and uneven, which greatly affects the performance of the device.

Method used

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  • Method for growing aluminum nitride with high quality on silicon substrate
  • Method for growing aluminum nitride with high quality on silicon substrate
  • Method for growing aluminum nitride with high quality on silicon substrate

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Experimental program
Comparison scheme
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Embodiment

[0024] Please refer to Figure 1 and Figure 2 together.

[0025] (1) First raise the temperature of the substrate 1 to 840°C for high-temperature degassing, and keep the In furnace on during the heating of the substrate 1 to prevent the formation of SiN on the substrate surface x . The material of the substrate 1 is silicon.

[0026] (2) Lower the temperature of the substrate 1 to 800°C, close the In furnace, open the Al furnace for 20 seconds, and cover the surface of the substrate 1 with several monoatomic layers of Al.

[0027] (3) Finally, at this temperature, keep the Al furnace in the open state, then open the In furnace, and feed NH 3 Gas, start the growth of aluminum nitride 2 (AlN), where NH 3 The flow rate is 75sccm.

[0028] The samples obtained by the above steps were tested and analyzed. The aluminum nitride 2 obtained by this growth method (Fig. 1, Fig. 2) is a high-quality aluminum nitride material; Figure 3); the surface roughness RMS of the AlN material ob...

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Abstract

The process of growing high quality AlN on Si substrate features that the process includes the following steps: raising the temperature of the substrate for high temperature deairing while letting the In furnace opened to avoid the formation of SiNx on the surface of the substrate; lowering the temperature of the substrate, shutting off the In furnace, opening the Al furnace for 5-30 sec to form Al layer on the substrate in the thickness of several atoms; and maintaining the temperature, opening the Al furnace, re-opening the In furnace and introducing NH3 gas to begin AlN growth.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to an epitaxial growth method of an aluminum nitride epitaxial film. Background technique [0002] Among the nitrides, aluminum nitride (AlN) occupies an important place. Together with group III nitrides such as gallium nitride (GaN), it has been widely used in short-wavelength light-emitting diodes (LEDs), high-temperature microelectronic devices, and microwave devices such as high electron mobility transistors (HEMTs). In addition, due to the unique properties of AlN itself, such as high surface acoustic wave velocity and negative electron affinity, it has many potential advantages in applications such as surface acoustic wave devices and field emission cathodes. Generally speaking, the commonly used substrate for AlN epitaxial growth is a sapphire substrate, but due to the low thermal conductivity and poor insulation of sapphire, the corresponding device technology is sev...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20H01L33/00
Inventor 张南红王晓亮曾一平肖红领王军喜刘宏新李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI