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Constant temperature electromigration test structure and its fillet optical adjacent correction method

A technology for testing structure and electromigration, applied in circuits, electrical components, electro-solid devices, etc., can solve problems such as circuit structure distortion and manufacturing technology failure

Inactive Publication Date: 2008-04-02
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During this process of copying the silicon from the mask, distortion of the circuit structure occurs
Especially in the current manufacturing process stage of 180 microns and below, if this distortion is not corrected, it will cause the failure of the entire manufacturing technology

Method used

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  • Constant temperature electromigration test structure and its fillet optical adjacent correction method
  • Constant temperature electromigration test structure and its fillet optical adjacent correction method

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Embodiment Construction

[0016] In order to better understand the content of the present invention, the present invention will be further described below in conjunction with examples, but these examples do not limit the present invention.

[0017] In the photolithography process for forming the metal line test structure, a zigzag metal line pattern with arc-shaped corners is first formed on the mask, and then photolithography is performed. The obtained metal line structure is shown in FIG. 2 . The line width of the metal line is equal to the distance between two adjacent metal lines parallel to each other. The specific requirement for the rounded corner structure of the metal line is that the radius of the outer arc is 1.5 times the line width of the metal line. In order to better obtain the above-mentioned arc structure after the photolithography process, optical proximity correction can be performed on the corresponding metal line pattern on the mask.

[0018] The basic principles and main features ...

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Abstract

The method modifies wire structure in use for conventional test to rounded angle structure in circular arc shape at turning places from shapes of right angle and zigzag, or shapes of approximate right angle and zigzag. Thus, the invention solves issue that electromigration test under constant temperature cannot be carried out caused by uneven film resistor existed in former structure.

Description

technical field [0001] The invention relates to a constant temperature electromigration test structure and a correction method for obtaining the structure, in particular to a method for perfecting the constant temperature electromigration test structure by means of optical proximity correction. Background technique [0002] In the semiconductor manufacturing process, in order to ensure the performance of the product, various tests need to be done, including constant temperature electromigration test. Usually, in order to ensure the size reduction of semiconductor devices, as shown in Figure 1, the metal wires in semiconductor components will adopt a zigzag structure to save space. Such a structure brings a problem, and it is tested for wafer-level constant temperature electromigration. At the time, there will be a corner effect (Corner Effect) at the corner of the metal wire. Before the normal electromigration test is performed, the large current is likely to cause undesired...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/522H01L21/768
Inventor 王伟张卿彦
Owner SEMICON MFG INT (SHANGHAI) CORP