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Cathode flow field plate for self-breathing micro-proton exchange film fuel cell and producing method

A technology of proton exchange membrane and cathode flow field, which is applied in the parts of fuel cells, solid electrolyte fuel cells, fuel cells, etc. Effective utilization, the effect of reducing contact resistance

Inactive Publication Date: 2008-06-25
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] To sum up, the current self-breathing micro-PEM fuel cell cathode flow field structure basically adopts a strip-shaped, column-shaped or dot-shaped hollow structure. The batteries with this structure have the disadvantage of large contact resistance, so the battery performance are not ideal

Method used

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  • Cathode flow field plate for self-breathing micro-proton exchange film fuel cell and producing method
  • Cathode flow field plate for self-breathing micro-proton exchange film fuel cell and producing method
  • Cathode flow field plate for self-breathing micro-proton exchange film fuel cell and producing method

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Experimental program
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Effect test

Embodiment 1

[0036] Select a N(100) silicon wafer with a thickness of 350 μm and a resistivity of less than 15Ω·cm, press Figure 1-3 In the structure shown, both the front and back sides adopt dry etching (DRIE method) to make a cathode double-layer hollow flow field structure with an effective area of ​​1.2×1.2cm. The duty cycle is 70%; the flow channel near the membrane electrode side is also of equal diameter, with a cross-sectional area of ​​11 μm×11 μm, a duty cycle of 50%, and a thickness of 60 μm. Figure 4 It is the SEM picture of the prepared cathode structure, wherein (a) is a structural photo of the flow channel on the air side, and (b) is an enlarged photo of the small hole structure corresponding to the back of the air side flow channel (near the MEA side); Figure 5 It is the SEM photo of the cross-section of the structure inclined upward at 30°; a conductive layer is formed on the surface of the micropores of the flow field by physical or chemical methods, ready for use.

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Embodiment 2

[0041] Select an N(100) silicon wafer with a thickness of 350 μm and a resistivity of less than 15Ω·cm, and adopt the same method as the manufacturing process steps (1)-(4) to form etching windows each with a size of 800 μm×800 μm on the front side of the silicon wafer , using dry etching (DRIE), controlling the etching time, so that a straight hole of equal diameter and 250 μm deep is formed; after cleaning, a thin layer of SiO on the back is removed 2 Finally, each etching window with a size of 100 μm×100 μm is exposed, and the silicon wafer is placed in a KOH solution with a concentration of 40 vol% at 50° C., and both sides are wet-etched simultaneously until the silicon substrate is penetrated. The formed double-layer flow field structure has macropores of equal diameter on the upper side and tapered holes on the lower side. The upper surface area is 800 μm×800 μm, the lower surface area is 730 μm×730 μm, the thickness of the macroporous layer is 300 μm, and the duty cycle...

Embodiment 3

[0043] Select an N(100) silicon wafer with a thickness of 300 μm and a resistivity of less than 15Ω·cm, and adopt the same method as the manufacturing process steps (1)-(4), and form a 1.5mm×1.5mm silicon wafer on the front surface of the silicon wafer. The corrosion window is wet-etched, that is, at 50°C, in a KOH solution with a concentration of 40vol%, and the etching time is controlled to form a tapered hole with a depth of 200 μm; after cleaning, a thin layer of SiO on the back is removed 2 Finally, each etching window with a size of 100 μm×100 μm is exposed, and the silicon wafer is placed in a 50° C., 40% (Vol%) KOH solution to continue etching until the silicon substrate is penetrated. The formed double-layer flow field structure, the upper surface area of ​​the large hole is 1.5mm×1.5mm, the lower surface area is 1.15mm×1.15mm, the total thickness of the large hole layer is 250μm, and the duty ratio is 85%; the small hole The layer has a cone-shaped pore structure, th...

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Abstract

This invention relates to a cathode flow field plate structure of a self breathing micro-proton exchange membrane(PEM) fuel battery, in which, said flow field is in a double-layer composite hollow structure, the sizes of which are reduced orderly, namely, the side closing to the air of the flow field plate is processed into a hollow runner vertical to the silicon chip direction and the other side closing to the membrane electrode is processed to a runner vertical to the silicon chip corresponding to the hollow runner closing to the air side to let the silicon chip pass through and the size of each runner closing to the membrane electrode is smaller than that closing to the air.

Description

technical field [0001] The invention relates to a cathode flow field plate for a self-breathing miniature proton exchange membrane (PEM) fuel cell and a manufacturing method thereof, belonging to the field of the PEM fuel cell. Background technique [0002] A fuel cell is a device that directly converts the chemical energy of fuel (such as hydrogen, methanol, etc.) and oxidants (such as oxygen, air, etc.) into electrical energy. The fuel reacts and loses electrons under the action of the anode catalyst, and the electrons reach the cathode through the external circuit, and the oxidant gets electrons at the cathode and is reduced. In order to provide flow channels for the reactants (fuel and oxidant) and reaction products to enter and exit the fuel cell, grooves of various shapes are often processed on the electrode plate of the fuel cell, such as point grooves, serpentine grooves and mesh grooves. Grooves, etc., are called flow fields, and the corresponding plates are called...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01M4/86H01M8/02H01M4/88H01M8/10H01M8/0258
CPCY02E60/521Y02E60/50
Inventor 郑丹夏保佳张熙贵娄豫皖张建
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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