Hydride gas phase extent device for manufacturing thick film nitride material

A technology of hydride gas phase and nitride, which is applied in the direction of final product manufacturing, metal material coating process, sustainable manufacturing/processing, etc., can solve the problems of low quality, uneven growth surface reaction, serious side reactions, etc., to achieve Improve temperature controllability and uniformity, solve uneven temperature distribution, and improve the effect of uniformity

Active Publication Date: 2008-09-10
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The epitaxial device used for the preparation of thick-film nitrides in the present invention existed during growth: nitrides were deposited everywhere, the reaction of the growth surface was uneven, the side reactions were serious, and the by-product NH 4 Chlorine, etc. block the gas path, gas phase depletion and other problems, resulting in problems such as low growth uniformity, low quality, low reaction efficiency and slow growth rate of thick film nitride materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hydride gas phase extent device for manufacturing thick film nitride material
  • Hydride gas phase extent device for manufacturing thick film nitride material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0033] Taking the growth of GaN material as an example, the growth process flow of the present invention is: the quartz epitaxial growth chamber 1 is heated by the growth chamber heating device 2; the growth chamber heating device 2 is divided into multi-temperature zone heating; 850°C, substrate 10 temperature is 1050°C, carrier gas, reaction gas HCl and NH 3 Enter the quartz epitaxial growth chamber 1 from the air inlet 7 at the bottom of the quartz epitaxial growth chamber 1; the carrier gas transports the reaction gas HCl to the metal reaction source placer 6, and the HCl reacts with the metal source to generate GaCl gas; the carrier gas transports GaCl to the substrate Bottom 10; at the same time, the carrier gas transports the reaction gas NH 3 Spray to the substrate 10 through the ammonia shower 8; GaCl and NH 3 GaN is generated by reaction on the substrate 10; during growth, the speed-regulating motor controls the rotation of the substrate and the lifting device 4 to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a hydride gas extending device for preparing thick nitride material, which comprises: an upright quartz extending growing room in cylinder shape; a growing room heater in annular shape for sheathing the growing room; an upper cover plate fixed above the growing room with a central round hole; a substrate rotating and lifting device whose front end has one rod whose end is the substrate base, while the rod is slide matched with the central round hole of upper cover plate; a metal react source arranger inside the growing room; a chassis fixed at the lower end of growing room with several gas inlets; and an ammonia gas sprayer with several ejector nozzles, while it is connected to the ammonia gas inlets of chassis with tube.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a hydride vapor phase epitaxy device designed and manufactured for growing high-quality, high-uniform thick-film nitride materials. Background technique [0002] The spectrum of nitride multi-system materials is from 1.9ev to 6.2ev, which can be used for interband emission, and the color covers from red to ultraviolet wavelengths, not only in optoelectronic applications, such as blue light, green light, ultraviolet light-emitting diodes (LEDs), short Wavelength laser diodes (LDs), ultraviolet detectors, Bragg reflection waveguides, etc. have obtained important applications and developments, and have also received extensive attention in microelectronic applications, which can produce high-temperature, high-frequency and high-power devices, such as high Electron mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs), etc. Among them, gallium nitride (GaN) m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205H01L33/00H01L31/18C23C16/34
CPCY02P70/50
Inventor 刘喆王军喜钟兴儒李晋闽曾一平段瑞飞马平魏同波林郭强
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap