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Preparation method of silicon nitride nano wire and nano band powder material

A silicon nitride nanometer and powder material technology, applied in nanostructure manufacturing, chemical instruments and methods, nitrogen compounds, etc., can solve the problems of high preparation cost and low temperature performance

Inactive Publication Date: 2008-12-24
JINAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although its application range is continuously expanding, there are disadvantages such as high preparation cost, reduced high-temperature performance, and inherent brittleness, which largely limit its application.

Method used

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  • Preparation method of silicon nitride nano wire and nano band powder material
  • Preparation method of silicon nitride nano wire and nano band powder material
  • Preparation method of silicon nitride nano wire and nano band powder material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Embodiment 1: Preparation of silicon nitride nanowires

[0039] Take 3.8 grams of NaN3 Add 2.69 grams of metal Na to a stainless steel reactor with a volume of about 60 ml, and then add 5 ml of liquid SiCl 4 . SiCl 4 It is analytical grade reagent, white solid crystal NaN 3 and metal Na are chemically pure reagents. Metal Na was removed from kerosene, blotted dry with filter paper, and cut into small pieces. Operations were carried out in a glove box filled with dry argon at room temperature. Cover and seal the reaction kettle, then put it into a well-type crucible furnace, react at a constant temperature of 450°C for 5 hours, cool to room temperature naturally, open the kettle and take out the reaction product. The product was washed with water, washed with absolute ethanol and centrifuged to remove the by-product sodium chloride, and dried in a vacuum oven at 80° C. for 24 hours to obtain 1.895 g of a white powder product. After structure, composition and morpho...

Embodiment 2

[0040] Embodiment 2: Preparation of silicon nitride nanowires

[0041] Take 3.25 grams of NaN 3 Add 3.0 grams of metal Na to a stainless steel reactor with a volume of about 60 ml, and then add 5 ml of liquid SiCl 4 . React at a constant temperature of 450°C for 2 hours, cool down to room temperature naturally, open the kettle and take out the reaction product. All the other operations are the same as above-mentioned example 1, obtain 1.947 gram white powder products. After structure, composition and morphology analysis, it is proved that the product is pure silicon nitride, in which β-Si 3 N 4 About 90.3%, α-Si 3 N 4 About 9.7% relative to SiCl 4 The total yield is 94.4%, and the morphology of the product is dominated by nanowires with a small amount of uniform nanobelts.

Embodiment 3

[0042] Embodiment 3: Preparation of silicon nitride nanobelts

[0043] Take 2.70 grams of NaN 3 Add 3.15 grams of metal Na to a stainless steel reactor with a volume of about 60 ml, and then add 5 ml of liquid SiCl 4 . React at a constant temperature of 500°C for 3.5 hours, cool down to room temperature naturally, open the kettle and take out the reaction product. All the other operations are the same as above-mentioned example 1, obtain 1.863 gram white powder products. After structure, composition and morphology analysis, it is proved that the product is pure silicon nitride, in which β-Si 3 N 4 About 89.7%, α-Si 3 N 4 About 10.3% relative to SiCl 4 The total yield is 90.6%, and the products are mainly nanowires, and also contain more nanorods and nanobelts.

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Abstract

A process for preparing Si3N4 nanowires (30 nm in diameter) and nanobands (40-80 nm in width and 20 nm in thickness) includes such steps as proportional reaction between SiCl4, NaN3 and Na at 400-500 deg.C, washing, filtering, and drying.

Description

Technical field: [0001] The invention relates to a method for preparing a silicon nitride nanowire or nanobelt powder material. Background technique [0002] Due to the advantages of high specific strength, high specific modulus, high temperature resistance, oxidation resistance, wear resistance and thermal shock resistance, silicon nitride ceramics have broad application prospects as structural materials and functional materials. Especially in the application environment of high temperature, high speed and strong corrosive medium often encountered in modern technology, silicon nitride materials also have many special application values. Although its application range is expanding, its application is largely limited by the disadvantages of high preparation cost, reduced high-temperature performance, and inherent brittleness. The preparation of nano-silicon nitride powder and the subsequent development of fine ceramic products are hot spots in the research and development of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B21/068B82B3/00C04B35/584
Inventor 谷云乐刘应亮曾文徐子林
Owner JINAN UNIVERSITY