High contrast electroluminescent device
An electroluminescent device and high-contrast technology, which is applied to electroluminescent light sources, electric solid state devices, electric light sources, etc., can solve the problems of increasing the difficulty of the manufacturing process, destroying the light-emitting layer, and having a particularly serious impact, achieving low manufacturing costs, Contrast-enhancing, high-contrast effects
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Embodiment 1
[0068] Device structure: glass / (CrO X / ITO / Cr) n / ITO / TPD / Alq / Mg:Ag (magnesium-silver alloy). In this device, CrO X As a low reflectivity film, ITO as a transition layer film, Cr as a high reflectivity film, CrO X Film and ITO film are made by reactive sputtering, and Cr is made by sputtering. These three layers of films form the extinction interference layer, and n represents the repetition period of the extinction interference layer. The value of n in this embodiment is 1. ITO / NPB / Alq / Mg: Ag is an electroluminescent device, ITO is used as a transparent anode, TPD is used as a hole transport layer, Alq is used as an electron transport layer and a light-emitting layer, MgAg alloy is used as a metal cathode, and ITO is made by reactive sputtering. , the other several layers of films are produced by evaporation. External background light in (CrO X / ITO / Cr) composed of extinction interference layer to produce extinction interference, thereby improving the contrast. in:
[...
Embodiment 2
[0073] Device structure: glass / (SiO 2 / TiO 2 ) n / ITO / CuPc / NPB / Alq / LiF / Al. In this device, the SiO 2 As a transition layer film, TiO 2 As a high reflectivity film, SiO 2 and TiO 2 It is made by sputtering, and these two layers of films constitute the extinction interference layer, n represents the repetition period of the extinction interference layer, and the value of n in this embodiment is 3. ITO / CuPc / NPB / Alq / LiF / Al is an electroluminescent device, ITO is used as a transparent anode, CuPc is used as a hole injection layer, NPB is used as a hole transport layer, CuPc is used as a hole injection layer, and Alq is used as an electron transport layer and light emitting layer. layer, LiF is used as electron injection layer, and metal aluminum Al is used as metal cathode. External background light in (SiO 2 / TiO 2 ) 3 The composed extinction interference layer produces extinction interference, thereby improving contrast. in:
[0074] SiO 2 : Silica
[0075] TiO 2 :...
Embodiment 3
[0079] Device structure: glass / (CrO X / ITO / Cr) n / ITO / PEDOT / PPV / Ca / Al. In this device, CrO X As a low reflectivity film, ITO as a transition layer film, Cr as a high reflectivity film, CrO X Film and ITO film are made by reactive sputtering, and Cr is made by sputtering. These three layers of films form the extinction interference layer, and n represents the repetition period of the extinction interference layer. The value of n in this embodiment is 1. ITO / PEDOT / PPV / Ca / Al is an electroluminescent device, ITO is used as a transparent anode, PEDOT is used as a hole transport layer, PPV is used as an electron transport layer and a light emitting layer, metal calcium Ca / Al is used as a metal cathode, PEDOT film and PPV film It is made by suspension coating or inkjet printing, and the metal Ca / Al electrode is made by evaporation. External background light in (CrO X / ITO / Cr) composed of extinction interference layer to produce extinction interference, thereby improving the cont...
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