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Photovoltaic element

A technology of optoelectronic components and photocurrent, which is used in electrical components, photovoltaic power generation, circuits, etc.

Inactive Publication Date: 2009-06-03
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although research and development are still in progress, since it was reported that microcrystalline silicon, which was put into practical use later than crystalline silicon and amorphous silicon, can obtain good photoelectric conversion efficiency and have no photodegradation at all (see Non-Patent Document 3), microcrystalline Silicon research also flourished

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-1

[0109] The present example, shown in detail below, was fabricated in a roll-to-roll manner figure 1 The diagram of the structure shown in the cross-sectional schematic diagram, the protective part is set after cutting.

[0110] As the substrate 101 , a rolled SUS430 having a width of 35 cm, a length of 200 m, and a thickness of 0.15 mm provided with unevenness generally called a mat finish was used. use with figure 2 The same device was used as a DC magnetron sputtering device, in which silver and zinc oxide targets of 48 cm in the width direction and 24 cm in the conveying direction were set on the electrode part, and the gas was exhausted to a pressure of 2 mpa or less. Thereafter, argon gas was supplied to each film forming chamber at a rate of 30 cc / min, and the pressure was maintained at 0.3 Pa. The substrate was continuously conveyed from the delivery chamber 201 to the take-up chamber 209, heated to 200°C from the back side, and a DC power of 4 kW was applied to form...

Embodiment 1-2、1-3、 comparative example 1-1、1-2、1-3

[0128] A photovoltaic element was completed in the same manner as in Example 1-1, except that the amount of silane supplied and the high-frequency power were changed as shown in Table 5 when forming the i-type microcrystalline semiconductor of the second pin junction. In addition, the reason for changing the silane supply amount and the high-frequency power at the same time is that the appropriate electric power changes according to the silane supply amount.

[0129] For these examples and this comparative example, the spectral sensitivity before and after the installation of the transparency protection member was measured, and the generated photocurrent was calculated from the AM1.5 sunlight spectrum of JIS. The results are shown in Table 5 (the results are the same as in Table 1).

[0130]Spectral sensitivity was measured using YQ-250BX manufactured by JASCO Corporation. For the size of a sample with a width of 35 cm and a length of 24 cm, it is the average value measured a...

Embodiment 2-1,2-2

[0135] (Example 2-1, 2-2, Comparative Examples 2-1, 2-2, 2-3)

[0136] A photovoltaic device was completed in the same manner as in Example 1-1, except that the transport speed was changed as shown in Table 6 when the i-type microcrystalline semiconductor of the second pin junction was produced.

[0137] For these Examples and Comparative Examples, the spectral sensitivity before and after the installation of the transparency protection member was measured, and the generated photocurrent was calculated from the AM1.5 sunlight spectrum of JIS. The results are shown in Table 6. In addition, the conversion efficiencies at the initial stage and after the deterioration test are also shown in Table 6 as before.

[0138] Table 6

[0139]

Transport speed

(mm / min)

Protective parts are installed

Front / back first pin

junction photocurrent

(mA / cm 2 ) Protective parts are installed

Front / rear second pin

junction photocurrent

(mA / cm 2 )...

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Abstract

A photovoltaic element is provided which has a high conversion efficiency, a low-cost producibility, a light weight and good overall characteristics in a final product form with a transparent protective member. The photovoltaic element comprises a first pin junction comprising an i-type amorphous semiconductor, a second pin junction comprising an i-type microcrystalline semiconductor, and a third pin junction comprising an i-type microcrystalline semiconductor provided in the mentioned order from a light incidence side, wherein at least a transparent protective member and a transparent electrode layer are provided on the light incidence side of the first pin junction, and wherein of the photocurrents generated at the plurality of pin junctions, the photocurrent generated at the third pin junction is the smallest.

Description

technical field [0001] The present invention relates to photoelectric elements such as solar cells and sensors, which have multiple pin junctions to improve conversion efficiency, and which are provided with protection members considering long-term use outdoors. Background technique [0002] Various photoelectric elements are being used as energy sources to replace independent power sources and system power for electrical equipment. However, especially as a substitute for system power, the price per power generation is still high, and it is currently in the stage of active research and development. [0003] Thin-film photovoltaic elements have been attracting attention since it was reported that similar to crystalline silicon, substitutional doping with an amorphous silicon thin film causes structural sensitivity (Non-Patent Document 1). As described in Patent Document 1 and the like, studies on thin-film photovoltaic elements have been actively conducted. [0004] In rece...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/075H01L31/078H01L21/205H01L29/04H01L31/0216H01L31/0368H01L31/0376H01L31/04H01L31/048H01L31/06H01L31/072H01L31/076H01L31/20
CPCH01L31/076Y02E10/545B32B17/10788H01L31/03685Y02E10/548Y02E10/50Y02B10/12Y02B10/10
Inventor 盐崎笃志杉山秀一郎
Owner CANON KK