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Ultrafast recovery diode module

A recovery diode, ultra-fast technology, applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of poor recovery time compatibility, large changes in reverse leakage current, and inapplicability, so as to optimize the installation position and avoid noise , the effect of high frequency

Active Publication Date: 2009-07-22
CHANGZHOU RUIHUA POWER ELECTRONICS DEVICES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The ultrafast recovery diode modules currently commonly used are composed of a single ultrafast recovery silicon diode chip, a main electrode, and a copper base plate without pre-bending. The upper end of the ultrafast recovery silicon diode chip is directly connected to the main electrode, and the lower end is directly connected to the main electrode. Soldered on the copper base plate without pre-bending, the recovery time compatibility of this ultra-fast recovery diode module is poor, and the reverse leakage current changes greatly, so it cannot be applied to the field with strict recovery time change requirements

Method used

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  • Ultrafast recovery diode module

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Embodiment Construction

[0009] The specific embodiment of the utility model is described below in conjunction with accompanying drawing:

[0010] The ultra-fast recovery diode module of the present invention includes a copper base plate 1, an aluminum nitride ceramic copper clad plate (ie AL NDBC plate) 2, a PBS plastic shell 3, a fastening ring 4, a PBS plastic cover plate 5, and a first main electrode 6 , the third main electrode 7, the second main electrode 8, three terminal screws 9, epoxy resin protective layer 10, RTV silicone rubber protective layer 11, two ultra-fast recovery diode chips 12, two-component elastic silicone gel protection Layer 13, internal connecting wire 14, the first ultrafast recovery diode chip 12 is fixed on the first main electrode 6, the second ultrafast recovery diode chip 12 is fixed on the second main electrode 8, and the third main electrode 7 passes through The inner connection line 14 is connected to the second ultrafast recovery diode chip 12, the first main elec...

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Abstract

The invention discloses an ultra-fast recovery diode module, which comprises a copper base plate, an aluminum nitride ceramic copper clad plate, a plastic shell, three main electrodes, an epoxy resin protective layer, a two-component elastic silicone gel protective layer, and RTV silicone rubber The protective layer, the ultrafast recovery diode chip and the internal connection wire, the ultrafast recovery diode chip is fixed on the main electrode, the main electrode is fixed on the aluminum nitride ceramic copper clad plate, and the aluminum nitride ceramic copper clad plate is fixed on the copper base plate, all super The fast recovery diode chip, main electrode, internal connection wire and aluminum nitride ceramic copper clad plate are all set in the plastic shell, and in the inner cavity of the plastic shell, there are three layers of protective layers in sequence from bottom to top, among which the ultra fast recovery diode chip , the main electrode, the aluminum nitride ceramic copper clad laminate, and the copper base plate are all connected by silver tin soldering. It has the characteristics of high frequency, super fast recovery, super soft and super durable.

Description

technical field [0001] The invention relates to a power semiconductor device, in particular to an ultrafast recovery diode module. Background technique [0002] The ultrafast recovery diode modules currently commonly used are composed of a single ultrafast recovery silicon diode chip, a main electrode, and a copper base plate without pre-bending. The upper end of the ultrafast recovery silicon diode chip is directly connected to the main electrode, and the lower end is directly connected to the main electrode. Soldered on a copper base plate without pre-bending, this ultra-fast recovery diode module has poor recovery time compatibility and large changes in reverse leakage current, so it cannot be applied to fields with strict requirements for recovery time changes. Contents of the invention [0003] The object of the present invention is to provide an ultrafast recovery diode module and a manufacturing method thereof. [0004] An ultra-fast recovery diode module, which in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/03H01L23/488H01L23/28
Inventor 陈兴忠颜书芳
Owner CHANGZHOU RUIHUA POWER ELECTRONICS DEVICES