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Sputtering target

A sputtering target and sputtering surface technology, applied in the field of multi-segment targets, can solve the problems of target cracking and the proposal is not necessarily effective, and achieve the effect of suppressing cracking

Inactive Publication Date: 2009-08-19
TOSOH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, when the size is larger and the length reaches more than 4 times the width as at present, in the above-mentioned proposals, such a problem frequently occurs that after being mounted on the target device, after vacuuming or after sputtering target cracking
Furthermore, in a monolithic sputtering device in which the target shape is approximately square, curvature occurs in any direction where the difference between the major axis and the minor axis is small, so the above proposal is not necessarily effective.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Add dispersant, binder and ion exchange in the tank with iron core nylon balls, 90% by weight of indium oxide powder with an average particle diameter of 1.3 microns and 10% by weight of tin oxide powder with an average particle diameter of 0.7 microns water and adjust the slurry. After the obtained slurry was sufficiently defoamed, pressure casting molding using a resin mold was performed to obtain a molded body. The compact was subjected to CIP densification under a pressure of 3 ton / cm2. Next, the molded body was placed in a sintering furnace in a pure oxygen atmosphere and sintered under the following conditions.

[0044] (sintering conditions)

[0045] Firing temperature: 1500°C, heating rate: 30°C / hour, sintering time: 15 hours, atmosphere: during the time from 800°C when heating up to 400°C when cooling down, the furnace is pure oxygen atmosphere, (weight of finished product / Oxygen flow rate) = 0.8 ground input.

[0046] The Vickers hardness of the obtained ...

Embodiment 2

[0050] An ITO sintered body was produced under the same conditions as in Example 1 except that the firing temperature was 1600°C. The Vickers hardness of the obtained sintered body was measured to be 760. The obtained sintered body was processed in the same manner as in Example 1. Ra is 0.06 micron, and the 3-point bending strength measured in the same way is 230 MPa.

[0051] Next, in the same manner as in Example 1, an ITO target having a flux layer thickness of 0.5 mm was produced. According to the same method as in Example 1, sputtering was performed on the obtained two targets respectively, and no cracks appeared in any of the targets.

Embodiment 3

[0053] An ITO target was produced in the same manner as in Example 2 except that the thickness of the solder layer was 0.8 mm. The obtained two targets were respectively sputtered in the same manner as in Example 1, and no cracks occurred in any of the targets.

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Abstract

The present application provides an ITO sputtering target that does not crack when evacuating or starting sputtering and during sputtering. In particular, a monolithic ITO sputtering target without the above-mentioned cracks, the short axis of the target is 0.7-1.0 times the long axis, or an elongated multi-segment ITO sputtering target whose length is more than 4 times the width. The sputtering target of the present invention is actually a multi-stage target formed by joining multiple sintered bodies composed of indium, tin and oxygen on a single substrate, wherein the Vickers hardness of the sintered body is 700 or more and 800 or less , the 3-point bending strength measured by applying a load parallel to the grinding direction of the grinding process performed on the surface to be the sputtering surface of the sintered body is 200 MPa or more and 250 MPa or less, and the sintered body is joined The thickness of the flux layer with the backing plate is not less than 0.5 mm and not more than 1 mm, and the width of the gap of the divided part where two sintered bodies of the plurality of sintered bodies are adjacent to each other through a predetermined gap is not less than 0.4 mm and not more than 0.8 mm. mm or less.

Description

[0001] This application is a divisional application of a Chinese invention patent application with an application date of October 11, 2002, an application number of 02143594.4, and an invention title of "sputtering target". technical field [0002] The present invention relates to an ITO sputtering target used in the manufacture of a transparent conductive thin film on a single substrate, especially a multi-stage target in which a plurality of targets are bonded. In particular, the present invention relates to a target whose minor axis is 0.7-1.0 times the major axis The monolithic sputtering target and the elongated multi-stage sputtering target whose target length is more than 4 times the width. Background technique [0003] ITO (Indium Tin Oxide) thin film has the characteristics of strong conductivity and strong penetrability. Because it is easier to carry out fine processing, it is used in flat panel displays such as liquid crystal displays (LCDs) and PDPs (plasma displa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C04B35/457C23C14/34
Inventor 内海健太郎原慎一长崎裕一
Owner TOSOH CORP