Power amplifier module

A power amplifier and signal amplification technology, applied in power amplifiers, amplifiers, high-frequency amplifiers, etc., can solve the problems of high output power dependence, difficult to achieve, and high product material utilization rate.

Inactive Publication Date: 2009-09-02
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In addition, in the conventional example mentioned above, such as Figure 3B As shown, the dependence of output power on temperature is large
This is because the base current of GaAs-HBT 3 is supplied from the current source. In addition to the current amplification factor of GaAs-HBT 3 and the temperature fluctuation of the current source, it is also easily affected by manufacturing variations, and it is difficult to achieve high Product material utilization rate

Method used

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Embodiment Construction

[0026] Power amplifier modules generally consist of 2-stage or 3-stage unit amplifiers. figure 1 It is a diagram showing an embodiment of the power amplifier module of the present invention. This embodiment shows the final stage amplifying unit that most needs damage protection, and its composition includes a signal amplifying system composed of GaAs-HBT 21, matching circuits 4, 5; a current source 29, transistors 23, 24, 28 and GaAs- The bias circuit system composed of HBT22 and the protection circuit 32 composed of transistors 24-27 and resistors 30 and 31. The signal input from terminal 1 is amplified by GaAs-HBT 21 via matching circuit 3 and output to terminal 2 via matching circuit 4 . Here, the GaAs-HBT 21 and the group of transistors 23, 24 together with the group of transistor 28 (diode-connected) and the GaAs-HBT 22 constitute a current mirror, and the current flowing into the GaAs-HBT 21 is supplied by a current source 29 The mirror ratio of the current is a multi...

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Abstract

Provided is a power amplifier module having high efficiency and high damage resistance, and at the same time having a function of protecting an amplifying device from being damaged from a standing wave generated by reflection from an antenna end or the like when a load fluctuates. By detecting and canceling the base overcurrent of the last-stage amplified GaAs-HBT and limiting it, the increase of the collector current can be prevented to prevent damage. In addition, by using both the function of stepping down the reactive current corresponding to the increase of the power supply voltage and the clipping function of the diode connected in parallel with the output stage GaAs-HBT, it is possible to prevent the output stage GaAs-HBT from receiving more than necessary voltage and current. In addition, it is highly resistant to manufacturing variations and temperature fluctuations of the GaAs-HBT and the base current supply source, and the cost is low.

Description

technical field [0001] The present invention relates to a power amplifier module for a portable terminal used in a mobile communication system, and particularly relates to a power amplifier module for a cellular phone system requiring high damage resistance against large load fluctuations. Background technique [0002] In recent years, the mobile communication market represented by the cellular phone system has expanded significantly, and portable terminals with higher efficiency are being sought for the purpose of increasing talk time. In order to realize this requirement, it is necessary to reduce the power consumption of the power amplifier, which consumes the most power among the parts constituting the mobile terminal, that is, to increase the efficiency. On the other hand, portable terminals, when they are in use, damage and metal contact with the antenna as the load of the power amplifier module often occur. The large standing wave generated by reflection can easily d...

Claims

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Application Information

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IPC IPC(8): H03F1/52H03F1/02H03F1/30H03F3/19H03F3/21H03F3/24H03F3/347H04B1/04H04B1/3822H04B1/40
CPCH03F2200/444H03F3/19H03F3/347H03F1/0261H03F1/302
Inventor 山下喜市田上知纪太部功关根健治
Owner RENESAS ELECTRONICS CORP
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