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Precursor solution collocation method for controlling MOCVD deposition PZT

A preparation method and technology of precursors, which are applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems that are not involved.

Inactive Publication Date: 2009-10-21
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing patents at home and abroad relate to the method for cleaning the lead titanate film (Samsung Electronics Co., Ltd., application number 99110200.2), a method based on Al X GaN 1-X / GaN heterojunction ferroelectric / semiconductor memory and its manufacturing method (Nanjing University, application number 02113005.1), method of depositing metal oxide thin films by MOCVD (Sharp Corporation, patent number ZL200310123290.0), controlling MOCVD deposition Precursor solution and method (Sharp Corporation, application number 200410030292.X) composed of accumulated PCMO, the above-mentioned patents all surround or relate to the preparation and cleaning of PZT for ferroelectricity and piezoelectricity, but at present it is for precise components and The MOCVD preparation technology of thick PZT has not yet been involved

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] to prepare Pb 0.5 (Zr 0.4 Ti 0.6 ) 0.5 o 3 The precursor solution of the component PZT thin film is taken as an example to illustrate the scheme of preparing the precursor.

[0016] To prepare the precursor solution, it is necessary to consider the ratio of the three elements of lead (Pb), pick (Zr) and titanium (Ti) that is finally precisely controlled. A certain proportion of Pb, Zr, and Ti elements initially determined needs to undergo a complex state change from solid to liquid to gas and then to solid. In addition, due to the different deposition rates of Pb, Zr, and Ti elements, according to actual calculations, in Among the three elements of Pb, Zr and Ti, the deposition rate of Pb oxide is the fastest, the deposition rate of Ti oxide is the second, and the deposition rate of Zr oxide is the slowest. If a PZT thin film of 120 nanometers (nm) to 150 nanometers (nm) is prepared on single crystal Si, according to the concentration of solute 0.14 mol / liter (mol / ...

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Abstract

The invention relates to a method for preparing precursor solution which controls MOCVD deposition PZT and belongs to the PZT thin film preparing technical field. The method is concretely characterized in that the precursor solution of a characteristic component PZT whose total solvent volume is 0.034L and mole concentration of solute is 0.14mol / L is composed of tetrahydrofuran 30ml, four-ethylene glycol dimethyl ether 4ml, Pb27%, Zr 55% and Ti18%. The PZT thin film of Pb0.5 (Zr0.4Ti0.6)0.5O3 which is prepared through using the solution has a substrate of 1-8 inches, the evenness is more than 95%, and the thickness is 1500 angstroms.

Description

technical field [0001] The present invention relates to the preparation of metal oxide films, metal organic precursors and metal organic chemical vapor deposition (MentalloOrganic Chemical Vapor Deposition, MOCVD), in particular to ferroelectric memories, specific components for piezoelectric micro / nano devices, thickness and titanium The MOCVD precise preparation method of lead acid (PZT) thin film material. Background technique [0002] Pick lead titanate (Pb(Zr 1-x Ti x )O 3 , PZT) film is an oxide film material with a wide range of uses and excellent ferroelectric and piezoelectric properties. Ferroelectric materials refer to a type of dielectric material that has spontaneous polarization and its spontaneous polarization can change direction with the change of the direction of the external electric field. Either positive or negative charges appear, and the charge density is proportional to the magnitude of the pressure. Ferroelectric thin film materials are mainly u...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/40
Inventor 阮勇谢丹任天令刘理天林惠旺
Owner TSINGHUA UNIV