Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and manufacture method thereof

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as high voltage, and achieve the effect of preventing deterioration

Inactive Publication Date: 2009-10-28
FUJITSU SEMICON MEMORY SOLUTION LTD KANAGAWA
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such a flash memory has a disadvantage that, when writing or erasing information, a tunnel current needs to be passed through the gate insulating film, and a relatively high voltage is required.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and manufacture method thereof
  • Semiconductor device and manufacture method thereof
  • Semiconductor device and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0094] Figure 5 ~ Figure 22 is a cross-sectional view during the manufacturing process of the semiconductor device according to the first embodiment of the present invention.

[0095] This semiconductor device is a planar FeRAM in which a contact region is provided on the lower electrode of a capacitor, and a voltage is applied to the lower electrode from a metal wiring above the contact region, and is fabricated as follows.

[0096] Initially, for Figure 5 The steps up to the cross-sectional structure shown in (a) will be described.

[0097] First, an element isolation insulating film 31 is formed by thermally oxidizing the surface of an n-type or p-type silicon (semiconductor) substrate 30, and an active region of a transistor is defined by the element isolation insulating film 31. This device isolation structure is called LOCOS (Local Oxidation Of Silicon: Local Oxidation of Silicon), but STI (Shallow Trench Isolation: Shallow Trench Isolation) can also be used instead....

no. 2 approach

[0239] In the first embodiment described above, a case where the present invention is applied to a planar FeRAM has been described. In contrast, in the present embodiment, the present invention is applied to a stacked FeRAM in which the lower electrode of the capacitor is directly connected to the conductive plug thereunder.

[0240] Figure 25 ~ Figure 32 It is a cross-sectional view during the manufacturing process of the semiconductor device according to the second embodiment of the present invention.

[0241] Initially, for Figure 25 The steps up to the cross-sectional structure shown in (a) will be described.

[0242] First, a groove for STI is formed on a silicon substrate 100, a silicon oxide film is buried in the groove as an element isolation insulating film 101, and an active region of the silicon substrate 100 is defined by the element isolation insulating film 101.

[0243] Next, boron is ion-implanted as a p-type impurity in the active region of the silicon su...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

There is provided a method for manufacturing a semiconductor device, including, forming a first insulating film on a semiconductor substrate, forming a capacitor on the first insulating film, forming a second insulating film covering the capacitor, forming a metal wiring on the second insulating film, forming a first capacitor protective insulating film covering the metal wiring and the second insulating film, forming an insulating sidewall on a side of the metal wiring, forming a third insulating film on the insulating sidewall, forming a hole by etching the third insulating film under a condition that an etching rate of the insulating sidewall would be lower than that of the third insulating film, and forming a conductive plug inside the hole.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof. Background technique [0002] A flash memory or a ferroelectric memory is known as a nonvolatile memory that can store information even if the power is cut off. [0003] Among them, the flash memory has a floating gate buried in a gate insulating film of an insulated gate type field effect transistor (IGFET), and stores information by storing charges representing stored information in the floating gate. However, such a flash memory has a disadvantage that, when writing or erasing information, a tunnel current needs to be passed through the gate insulating film, and a relatively high voltage is required. [0004] In contrast, the ferroelectric memory is also called FeRAM (Ferroelectric Random Access Memory), which stores information by using the hysteresis characteristics of the ferroelectric film of the ferroelectric capacitor. The ferroelectric film is polarized by a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8246H01L27/105H10N97/00
CPCH01L27/11507H01L28/65H01L21/76814H01L21/76897H01L21/76832H01L28/40H01L28/55H01L2924/3011H01L21/76834H01L21/76826H10B53/30H01L27/105
Inventor 菊池秀明永井孝一
Owner FUJITSU SEMICON MEMORY SOLUTION LTD KANAGAWA