Ultrathin silicon based particle detector and preparing method thereof

A technology for detectors and manufacturing methods, which is applied in the fields of high-energy physics and nuclear physics, can solve difficult problems, and achieve the effects of increasing breakdown voltage, improving breakdown voltage, and excellent electrical characteristics

Inactive Publication Date: 2010-03-17
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing detectors mainly use dry etching to achieve thinning of detectors, and it is very difficult to thin a large area to 100 μm

Method used

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  • Ultrathin silicon based particle detector and preparing method thereof
  • Ultrathin silicon based particle detector and preparing method thereof
  • Ultrathin silicon based particle detector and preparing method thereof

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Embodiment Construction

[0052] The ultra-thin silicon-based particle detector and its manufacturing method of the present invention will be further described below with reference to the drawings and embodiments.

[0053] The silicon-based particle detector in this embodiment includes a silicon substrate, a detection window on the silicon substrate, and a dielectric layer outside the silicon substrate and the detection window;

[0054] The silicon substrate is N-type silicon with 100 crystal orientation, the resistivity is greater than 1500 ohm cm, and the thickness is 320 μm;

[0055] The detection window is circular, including P region 1, N region 2 and a silicon layer sandwiched between them with a thickness less than 120 microns;

[0056] A protective ring 3 is arranged around the P area 1, and the protective ring 3 is circular, and it is separated from the P area 1 by a certain distance;

[0057] An annular buffer step 4 formed by a substrate layer is provided above the P region 1;

[0058] N z...

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Abstract

The invention discloses an ultra-thin silica-based particle detector and a preparation method thereof. The detector of the invention comprises a silicon chip, a detection window arranged on the silicon chip and a dielectric layer outside the silicon chip and the detection window; the detection window comprises a P zone, an N zone and a silicon layer clamped between the P zone and the N zone; the periphery of the P zone is provided with a protective ring which is not contacted with the P zone; a buffering step formed by a substrate layer is arranged above the P zone; the N zone is preferably formed by a TMAH etching method, with the shape of an reverse round table and the included angle between the side and the bottom surface of 54.74 degree; the surface layers of the P zone and the N zoneare both provided with an aluminum layer. The invention also discloses the preparation method of the detector. The detector of the invention can be well used as a Delta Epsilon detector for identifying particles in the fields such as space detection, nuclear physics, medical detection and environment monitoring, etc.

Description

technical field [0001] The present invention relates to an ultra-thin silicon-based particle detector and a preparation method thereof. More specifically, the present invention relates to a silicon-based particle detector with an ultra-thin PIN silicon-based structure capable of detecting particle types and energy, and a preparation method thereof , belonging to the field of high energy physics and nuclear physics. Background technique [0002] Particle detectors can detect charged particles, ultraviolet photons, X-rays, alpha particles, beta particles, etc. Therefore, it has extremely wide applications in space detection, nuclear physics, medicine and environmental monitoring. Taking space detection as an example, particle detectors can effectively detect particles in the solar wind and cosmic rays, which is of great significance for us to understand the cosmic environment and analyze the failure of electronic devices in satellites. [0003] Semiconductor detectors refer ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/115H01L31/18
CPCY02P70/50
Inventor 李科佳王金延田大宇张录张太平金玉丰
Owner PEKING UNIV
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