Ultrathin silicon based particle detector and preparing method thereof
A technology for detectors and manufacturing methods, which is applied in the fields of high-energy physics and nuclear physics, can solve difficult problems, and achieve the effects of increasing breakdown voltage, improving breakdown voltage, and excellent electrical characteristics
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[0052] The ultra-thin silicon-based particle detector and its manufacturing method of the present invention will be further described below with reference to the drawings and embodiments.
[0053] The silicon-based particle detector in this embodiment includes a silicon substrate, a detection window on the silicon substrate, and a dielectric layer outside the silicon substrate and the detection window;
[0054] The silicon substrate is N-type silicon with 100 crystal orientation, the resistivity is greater than 1500 ohm cm, and the thickness is 320 μm;
[0055] The detection window is circular, including P region 1, N region 2 and a silicon layer sandwiched between them with a thickness less than 120 microns;
[0056] A protective ring 3 is arranged around the P area 1, and the protective ring 3 is circular, and it is separated from the P area 1 by a certain distance;
[0057] An annular buffer step 4 formed by a substrate layer is provided above the P region 1;
[0058] N z...
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