Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Carbon/silicon heterojunction material having NH3 gas sensitizing effect

A silicon heterojunction, gas-sensitive technology, applied in the direction of material resistance, can solve the problems of short life, potential safety hazards, and limited application of gas sensors, and achieve the effects of short response time, good stability and high sensitivity

Inactive Publication Date: 2012-01-04
CHINA UNIV OF PETROLEUM (EAST CHINA)
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since most metal oxides (such as ZnO, TiO 2 , SnO 2 etc.) need to work at a temperature of about 300 ° C to obtain high sensitivity, so the gas sensor made of these materials needs an additional heating device
This makes the power consumption of this type of metal oxide gas sensor relatively large, which limits the application of this type of gas sensor
In the monitoring of some flammable and explosive gases, there is a safety hazard if there is a heater, and it will cause difficulties in the miniaturization and integration of conductivity gas sensors.
In addition, there are conductive polymer gas sensors that can work at room temperature, but their lifespan is not long and their stability is not ideal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Carbon/silicon heterojunction material having NH3 gas sensitizing effect
  • Carbon/silicon heterojunction material having NH3 gas sensitizing effect
  • Carbon/silicon heterojunction material having NH3 gas sensitizing effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Embodiment 1, a diamond-like carbon film 2 with a thickness of 100 nm is sputtered on a silicon substrate 1 with a thickness of 1.0 mm by magnetron sputtering, and a DC power supply 4 and an ammeter are connected on the heterojunction material 5, 3 are the contacts between the power line and the material, and become conductive NH 3 Gas sensors such as figure 1 As shown, the purity of the graphite target is 99.9%, the sputtering DC voltage is 0.50KV, the sputtering DC current is 0.10A, the sputtering deposition temperature is 400°C, and the sputtering time is 20 minutes. The sensitivity of the resistance of the sample at room temperature to ammonia and air has been tested, and the test results are as follows: figure 2 shown. The results show that the resistance of the sample in air is about two orders of magnitude smaller than that in ammonia.

Embodiment 2

[0018] Example 2, take graphite powder with a purity of 99.9%, add a small amount of iron powder with a purity of 99.9%, and use cold pressing to make an iron-carbon composite target with a mass content of iron of 5%. The iron-carbon composite target is sputtered onto a silicon wafer 1 with a thickness of 1.0 mm by magnetron sputtering, and an iron-doped carbon film 2 with a thickness of 100 nm is formed on the silicon wafer. Turn on the DC power supply 4, 3 is the contact point between the power line and the material, and it becomes a conductive NH 3 Gas sensors such as figure 1 As shown, the sputtering DC voltage is 0.50KV, the sputtering DC current is 0.10A, the sputtering deposition temperature is room temperature, and the sputtering time is 20 minutes. The sensitivity of the resistance of the sample at room temperature to ammonia and air has been tested, and the test results are as follows: image 3 shown. The results show that the resistance of the sample in air is ab...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a new carbon / silicon heterojunction material with NH3 gas sensitive effect, and the material uses the magnet controlled sputtering method to sputter the graphite target of the 99.9% purity or the iron-graphite composite target containing 0~10% (mass fraction) iron to the polished silicon substrate, forming a film with thickness of 20nm~200nm. The new C / Si heterostructure material has obviously NH3 gas sensitive effect, and it can be used for the preparation of NH3 gas sensor, working at room temperature, no need heater, and it is easy to achieve device miniaturization, integration, and high sensitivity, short response time, good stability, simple production process, low cost, and it has broad application prospects.

Description

Technical field: [0001] The present invention relates to a kind of having NH 3 Doped carbon film / silicon heterojunction material with gas sensitive effect. Background technique: [0002] Conductivity-type gas sensor is to use the gas molecules to be measured to absorb or react with the surface of the gas-sensitive material to cause the transfer of charges (or the change of the concentration of the charge carrier), which in turn leads to the change of the conductivity of the gas-sensitive material to detect the gas molecules to be measured. exist. [0003] Gas sensors have been widely used in environmental monitoring, chemical industry, food processing and other fields. Among various gas sensors, some metal oxide sensors have attracted widespread attention due to their advantages such as simple preparation process and low price. However, since most metal oxides (such as ZnO, TiO 2 , SnO 2 etc.) need to work at a temperature of about 300°C to obtain high sensitivity, so g...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12
Inventor 薛庆忠高熙礼郝兰众郑庆彬李群
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com