Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flat-plate sandwich structural semiconductor type gas sensor and producing method thereof

A gas sensor and sandwich structure technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low manufacturing process precision, high heating power consumption, low electrical conductivity, etc., and achieve high manufacturing process precision and signal. Strong, small output resistance effect

Inactive Publication Date: 2007-08-22
HARBIN UNIV OF SCI & TECH
View PDF0 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problems of high resistance, low conductivity and high heating power consumption of the existing structural semiconductor sensors and the low precision of the existing sensor manufacturing method, the present invention provides a semiconductor gas sensor with a flat sandwich structure and its manufacturing method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flat-plate sandwich structural semiconductor type gas sensor and producing method thereof
  • Flat-plate sandwich structural semiconductor type gas sensor and producing method thereof

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0018] Specific Embodiment 1: The present embodiment will be specifically described below in conjunction with FIG. 1, FIG. 2 and FIG. , the substrate 1, the heater 2, the insulating isolation layer 3, the sensitive electrode 4, the sensitive film 5 and the porous electrode 6 are concentric and in a regular shape, and the heater 2 is etched on the substrate 1, and the heater The length of 2 is equal to the diameter of the substrate 1, and an insulating isolation layer 3 is plated on the heater 2, and a sensitive electrode 4 is etched on the insulating isolation layer 3, and the length of the sensitive electrode 4 is equal to the diameter of the substrate 1, and the sensitive electrode 4 and the heater 2 are perpendicular to each other, the area of ​​the insulating isolation layer 3 is larger than the area of ​​the overlapping part of the heater 2 and the sensitive electrode 4, the area of ​​the insulating isolation layer 3 is smaller than the area of ​​the substrate 1, and the s...

specific Embodiment approach 2

[0019] Specific Embodiment 2: The present embodiment will be described in detail below in conjunction with FIG. 1. In this embodiment, the middle part of the heater 2 is serpentine, and the two sides are pads 2-1, and the pads 2-1 on both sides are equal in size. Other components And the connection relationship is the same as the specific embodiment one.

specific Embodiment approach 3

[0020] Specific embodiment three: the present embodiment is described in detail below, and the present embodiment has the following steps to complete

[0021] Step 1: Select the required substrate, the substrate is SiO with a thickness of 0.1-0.5mm 2 / Si, Ai 2 o 3 Or glass, and then boiled with deionized water for 10-20 minutes to wash away the soluble pollutants on the substrate, and then ultrasonically cleaned with acetone at a frequency of 30khz for 10-20min to remove organic pollutants on the substrate, and then used alcohol at a frequency of 30khz Perform ultrasonic cleaning for 10-20 minutes to wash away organic pollutants on the substrate, and use deionized water to perform ultrasonic cleaning at a frequency of 30khz for 10-20 minutes. Dry or dry the substrate to wash away the acetone and alcohol remaining on the substrate;

[0022] Step 2: To make the heater, follow the steps below:

[0023]Operation sequence 1: Put the substrate into the sampling chamber of the JG...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a semiconductor gas sensor with a flat sandwich construction and its manufacturing method, which resolves problems of large resistance, low conductivity and high heating consumption in existed constructions of semiconductor sensor. In this sensor, there is a heater etched on substrate, a sensitive source etched on insulating layer, insulating layer plated on heater, sensitive film plated on sensitive source and a perforated electrode set on sensitive film. The manufacturing method contains steps of selecting and washing by substrate, fabricating heater, insulating layer and sensitive electrode etc. The invention has merits of small resistance, high conductivity and low heating consumption, which has high precision in manufacturing technology.

Description

technical field [0001] The invention relates to a semiconductor gas sensor with a flat sandwich structure and a manufacturing method thereof. Background technique [0002] Since the advent of zinc oxide gas sensors in the 1960s, gas sensors have developed rapidly and have become one of the most important branches of sensors. It is a sensor that uses physical effects, chemical reactions and other mechanisms to detect specific components in the gas, and converts them into electrical signals through sensitive chips and conversion components. It has been widely used in industrial production, environmental protection, national defense, medicine, people's lives, transportation and other fields. So far, people have developed many gas sensors using various principles, such as: semiconductor type, electrochemical type, SAW type, heat conduction type, photochemical type, and so on. Among them, the semiconductor gas sensor is still the current research hotspot and mainstream product....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12H01L21/00
Inventor 施云波郭建英张洪泉丁喜波冯侨华时强
Owner HARBIN UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com