Semiconductor transistor element and its production

Abstract

The invention is concerned with the method of making metal oxide semiconductor (MOS)transistor element, the characteristic is: the back-etching step that uses the silicon nitride covering layer with different stress and the superfluity shallow gully insulating layer, the field effect transistor element of N or P metal oxide semiconductor can with higher current gain, improves the operating efficiency of the semiconductor transistor element.

Description

technical field [0001] The invention relates to a semiconductor transistor element and a manufacturing method thereof, in particular to an N or P-type metal-oxide-semiconductor (MOS) field effect device without a silicon nitride spacer-less (silicon nitride spacer-less) Transistor element and method of making the same. Background technique [0002] As known in the industry, current high-speed metal-oxide-semiconductor transistor devices with strained silicon use the principle that the lattice constant of the silicon germanium layer is different from that of silicon, resulting in structural strain when silicon is epitaxy on silicon germanium. . In this type of strained Si-FET device, a biaxial tensile strain of the Si layer is usually involved, due to the fact that the SiGe layer has a larger lattice constant than Si, which makes The band structure of silicon is changed, resulting in increased carrier mobility. Therefore, a component with a strained silicon structure in th...

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Problems solved by technology

For example, in the prior art, in order to improve the performance of the transistor, the silicon nitride capping layer 46 covering the silicon nitride spacer 32 is usually provided with a stress, such as tensile (tensile) stress or compressive (compressive) Stress, however, the effect of the traditional method to improve the performance of the transistor is still limited and cannot reach a satisfactory level

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