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Semiconductor device and method for manufacturing the same

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of difficult charge retention and deterioration of charge retention, and achieve the effect of volume reduction and good charge retention characteristics

Inactive Publication Date: 2007-09-05
OKI ELECTRIC IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] In this way, when charge diffusion occurs, the number of charges existing in the lower portion of the silicon nitride film, that is, on the side close to the substrate is relatively reduced, so the charges are not easily held, and as a result, the charge retention property deteriorates.

Method used

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  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same

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no. 1 Embodiment approach

[0035] In the first embodiment, a method of manufacturing a semiconductor device including a MOSFET including a silicon nitride film having a charge holding function, having a film thickness of up to 100 Ȧ, and having a thickness of 100 Ȧ other than a side surface of a gate electrode portion is described. All formed. This manufacturing method includes the first step to the seventh step. Hereinafter, each step will be described in order from the first step.

[0036] 1(A)-(C) are process diagrams illustrating the first embodiment of the present invention. 2(A)-(C) are process diagrams following FIG. 1(C). 3(A)-(C) are process diagrams following FIG. 2(C). These figures each show cutouts in cross-sections of the structures obtained at various stages of production.

[0037] First, in the first step, impurities of the first conductivity type are introduced into the element region 13 of the semiconductor substrate 11 to form the first conductivity type impurity region 17 to obtain...

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Abstract

To secure an excellent charge holding characteristics by suppressing a diffusion of electron charge introduced to a silicon nitride film in MOSFET by a writing operation. A silicon nitride film 27, being a memory function body, is formed by a thin film to have a film thickness of 100 1 / 2 A at maximum. Further, a side face silicon nitride film 27a between a side face on the side of facing a gate electrode part 23 of a side wall 35 and a side face of this gate electrode part is removed to reduce a volume.

Description

technical field [0001] The present invention relates to a semiconductor device including a field effect transistor having a memory function body having a charge holding function and a method for manufacturing the same. Background technique [0002] In the past, known nonvolatile memory devices have the following characteristics: each MOS type field effect transistor (hereinafter referred to as MOSFET (Metal Oxide Semiconductor Field Effect Transistor)) mounted on the semiconductor device has a memory function of 2 bits, That is the so-called "1 unit 2 bit function". Such a nonvolatile memory device has a structure in which a silicon nitride film provided on a side surface of a gate electrode and a substrate surrounding the gate electrode has a charge holding function, and the silicon nitride film is used as a memory function body. [0003] A semiconductor device disclosed in Patent Document 1, for example, is known as such a conventional semiconductor device including a sil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L27/04H01L21/336H01L21/28H01L21/822
CPCH01L21/28282H01L29/42348H01L29/7923H01L29/40117H01L29/6656
Inventor 安藤秀幸
Owner OKI ELECTRIC IND CO LTD