Static protection circuit suitable for radio frequency identification label chip

A technology for radio frequency identification tags and electrostatic protection, which is applied in the field of passive RFID tag chips, can solve the problems of low efficiency, high power consumption, and inability to share current equally, so as to reduce area, reduce power consumption, and improve ESD The effect of protective performance

Inactive Publication Date: 2007-10-03
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
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Problems solved by technology

However, in the actual operation of the circuit, due to the signal delay caused by the parasitic capacitance introduced by the N tube, the N tube and the D tube cannot play the role of sharing the current equally. The N tube close to the input node PAD often stops before the D tube starts to discharge the current. burnt
In addition, the N tube in the circuit can only play the role of passive discharge current, but cannot work under control, which makes the use efficiency of the transistor N occupying a large chip area low and consumes a lot of power

Method used

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  • Static protection circuit suitable for radio frequency identification label chip
  • Static protection circuit suitable for radio frequency identification label chip
  • Static protection circuit suitable for radio frequency identification label chip

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[0022] The description of this example is based on the circuit design based on the SMIC (SMIC) 0.35μm process with embedded EEPROM. The process library defines the threshold voltage of the PMOS transistor as V THP =0.7V, the threshold voltage of the NMOS tube is V THN =0.7V, R3 resistance is 10KΩ. The withstand voltage of an ordinary NMOS tube is 9.8V.

[0023] circuit operation, if V TDD > 4.8V, the circuit enters b high voltage discharge state, if V TDD <4.8V, the circuit enters a normal state. When an electrostatic pulse appears on the input node PAD, the circuit directly enters the c electrostatic discharge state. In any case, the maximum voltage of the output node OUT is 9.3V, so it will not cause damage to the circuit device.

[0024] In actual production, the NMOS tubes N1 and N2 will adopt an ESD protection tube structure to increase the size of the source and enhance the heat dissipation capability.

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Abstract

The present invention discloses an electrostatic protection circuit applicable to radio-frequency identification label chip. Said circuit includes voltage comparator circuit and current dumping circuit. Said voltage comparator circuit includes PMOS transistor P1 and P3 and resistor R2 and R3 and is used for detecting and comparing voltage value; and said current dumping circuit includes NMOS transistor N1 and N2, diode D1 and resistor R1 and is used for dumping electrostatic pulse and radio-frequency high-voltage.

Description

technical field [0001] The invention belongs to the technical field of electrostatic protection, in particular to an electrostatic protection (ESD, electronic static discharge) circuit suitable for radio frequency identification (RFID) tag chips, especially suitable for application in passive RFID tag chips. Background technique [0002] RFID (radio frequency identification) radio frequency identification technology has been paid more and more attention in recent years. Compared with barcodes, magnetic cards, IC cards and other contemporary or early identification technologies, radio frequency cards have the advantages of non-contact, long reading distance, and ability to identify moving targets. Because the energy of the passive RFID tag chip comes from electromagnetic waves, and the induced voltage will change according to the strength of the magnetic field, it is necessary to have a radio frequency voltage limiting circuit to limit the induced voltage to prevent high volt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06K19/073H05F3/00
Inventor 邹雪城张科峰刘政林戴逸飞刘冬生
Owner HUAZHONG UNIV OF SCI & TECH
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