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Molten-salt method for growing zinc oxide xingle crystal using bismuth borate as flux

A technology of zinc oxide single crystal and flux, applied in the direction of melt from molten solvent, single crystal growth, crystal growth, etc., can solve the problems of high crystal price, lower growth temperature, long period, etc., and achieve clear screen , the effect of improving quality

Inactive Publication Date: 2011-10-26
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantages of the hydrothermal synthesis method are high risk, expensive equipment, long period, high cost, and high crystal price; while the gas phase method is also dangerous, complicated equipment, high cost, and high crystal price ; Relatively speaking, the use of molten salt growth can reduce the growth temperature and reduce the volatilization of ZnO. At the same time, it is also possible to modify the crystal by selecting suitable fluxes and doping with suitable ions in the crystal, such as , for the preparation of ZnO semiconductor devices, it is beneficial to form the p-n junction

Method used

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  • Molten-salt method for growing zinc oxide xingle crystal using bismuth borate as flux
  • Molten-salt method for growing zinc oxide xingle crystal using bismuth borate as flux

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Embodiment 1

[0020] The ZnO single crystal was grown by the molten salt method, and the raw material used was analytically pure Bi. 2 o 3 , B 2 o 3 , and spectrally pure ZnO. Flux selection Bi 2 o 3 -B 2 o 3 -ZnO system. Then do the batching according to the following proportions: Bi 4 B 2 o 9 : ZnO=20mol%: 80mol%.

[0021] After weighing the raw materials, grind them with an agate mortar, mix them evenly, and press them into tablets, then put them into a Φ55mm×60mm platinum crucible, place them in a growth furnace, raise the temperature until the raw materials melt, crystallize spontaneously, and grow seed crystals first. Then use the trial seed crystal method to measure the saturation temperature of the melt to be about 980°C, keep the temperature at about 50°C above the saturation temperature for 24 hours, then lower the seed crystal to the melt, and drop to the saturation temperature after half an hour. The temperature was lowered at a rate of ℃ / d, and after about 10 days o...

Embodiment 2

[0024] The ZnO single crystal was grown by the molten salt method, and the raw material used was analytically pure Bi. 2 o 3 , B 2 o 3 , and spectrally pure ZnO. Flux selection Bi 2 o 3 -B 2 o 3 -ZnO system. Then do the batching according to the following proportions: Bi 4 B 2 o 9 : ZnO=40mol%: 60mol%.

[0025] After weighing the raw materials, grind them with an agate mortar, mix them evenly, and press them into tablets, then put them into a Φ55mm×60mm platinum crucible, place them in a growth furnace, raise the temperature until the raw materials melt, crystallize spontaneously, and grow seed crystals first. Then use the trial seed crystal method to measure the saturation temperature of the melt to be about 900°C, keep the temperature at about 50°C above the saturation temperature for 24 hours, then lower the seed crystal to the melt, and drop to the saturation temperature after half an hour. The temperature is lowered at the rate of ℃ / d, and the method of period...

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Abstract

The present invention relates to the growth of zinc oxide single crystal by using molten-salt growth method using bismuth borate as fluxing agent. In the present invention, the raw materials are: analytical agent bismuth oxide (Bi2O3), boron oxide (B2O3) and specpure zinc oxide (ZnO). During the growth of the crystal, the temperature is reduced at rate of 2-15 DEG C / d. Due to the single crystal of zinc oxide existence interval being of broad, and lower melting point (600 DEG C), so it is prospected that large-sized zinc oxide single crystal with excellent properties can be produced by using bismuth borate (Bi4B2O9) as fluxing agent.

Description

Technical field: [0001] The invention relates to the field of growth and preparation of crystal materials, in particular to a novel flux used for the growth of ZnO single crystal molten salt method. Background technique: [0002] ZnO crystal is a multifunctional crystal. It is not only a new type of semiconductor laser (LD) and light emitting (LED) material that is popular in research today, but also a substrate material suitable for making substrates of nitride semiconductors and other devices, and it is also a solid-state laser substrate, A composite material with multiple functions such as piezoelectricity, electro-optic, and sound-light. [0003] In foreign countries, scientists have done a lot of research on the growth, structural properties, luminescent properties and electrical properties of ZnO crystals. In 1966, Y.S.Park and D.C.Retnolds of the Ohio Air Force Base Aviation Research Laboratory grew high-quality crystals and conducted preliminary research on their s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/48C30B9/12
Inventor 涂朝阳朱昭捷游振宇王燕李坚富
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI