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Method for nitriding tunnel oxide film, method for manufacturing non-volatile memory device, non-volatile memory device, control program and computer-readable storage medium

A technology of non-volatile storage and tunnel oxidation, applied in the field of control programs and computer-readable storage media, to reduce traps, improve data retention characteristics, and suppress leakage currents

Inactive Publication Date: 2007-12-26
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, recently, people are seeking to further improve the film quality of the tunnel oxide film, further improve the memory characteristics such as the data retention characteristics in the floating gate (floating gate), so the above-mentioned nitrogen distribution is gradually showing insufficient in the existing thermal nitridation process

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  • Method for nitriding tunnel oxide film, method for manufacturing non-volatile memory device, non-volatile memory device, control program and computer-readable storage medium
  • Method for nitriding tunnel oxide film, method for manufacturing non-volatile memory device, non-volatile memory device, control program and computer-readable storage medium
  • Method for nitriding tunnel oxide film, method for manufacturing non-volatile memory device, non-volatile memory device, control program and computer-readable storage medium

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Embodiment Construction

[0034] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[0035] FIG. 1 is a cross-sectional view for explaining the method of nitriding a tunnel oxide film of the present invention. This nitriding process is part of the manufacturing process of non-volatile memory elements such as EPROM, EEPROM, and flash memory.

[0036] In the manufacturing of a memory cell of a nonvolatile memory element, first, as shown in FIG. 1A, a tunnel oxide film 102 with a thickness of about 10 nm is formed on the main surface of the Si substrate 101 by, for example, a thermal oxidation process of the Si substrate 101, and then In the main surface area of ​​the Si substrate 101, predetermined ions are implanted, and then the tunnel oxide film 102 is nitridated. The nitriding treatment uses a gas containing nitrogen for plasma treatment, so that, as shown in FIG. 1B, a nitriding region 103 is formed on the surface portion of the tunnel oxide fi...

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Abstract

When nitriding a tunnel oxide film in a non-volatile memory device, a nitrided region is formed in the surface portion of the tunnel oxide film by a plasma processing using a process gas containing a nitrogen gas.

Description

Technical field [0001] The present invention relates to a method for nitriding a tunnel oxide film in a non-volatile memory element, a method for manufacturing a non-volatile memory element using the method, a non-volatile memory element, and a method for performing the above-mentioned nitriding process The control program of the method and a computer-readable storage medium. Background technique [0002] For the purpose of improving memory characteristics in nonvolatile storage elements such as EPROM, EEPROM, and flash memory, the tunnel oxide film has been nitridated. It is known that the nitriding treatment of such an oxide film includes heat treatment that is still being used (for example, the following Patent Documents 1 and 2). [0003] In the existing oxide film nitriding method using heat treatment, in order to advance the nitriding process in a thermal equilibrium state, it is basically necessary to adopt a specific nitriding region formation position and concentration, ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8247H01L21/318H01L27/115H01L29/788H01L29/792
CPCH01L29/513H01L21/28273H01L21/3143H01L29/7881H01L29/40114H01L21/02271H01L21/022H01L21/02252H01L21/02332H01L21/0234
Inventor 盐泽俊彦古井真悟小林岳志北川淳一
Owner TOKYO ELECTRON LTD
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