Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for treating imperfect films of vacuum sputtering electromagnetic wave interference prevention films

An anti-electromagnetic wave, vacuum sputtering technology, applied in vacuum evaporation plating, sputtering plating, ion implantation plating and other directions, can solve problems such as insufficient adhesion, corrosion, adverse effects, etc., to improve production efficiency, operation process Simple and convenient, fast process effect

Inactive Publication Date: 2008-01-02
MITAC PRECISION TECH CO LTD SHUNDE DISTRICT FOSHAN CITY
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the vacuum sputtering anti-electromagnetic interference (EMI) film layer may cause defects on the film surface due to reasons such as electric field, magnetic field or environmental factors, such as insufficient adhesion, abnormal color and other adverse phenomena
A few days ago, chemical reagents were generally used to corrode the surface film layer and then re-coat the film for this phenomenon, but the chemical reagents had adverse effects on the environment and operators.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0009] Select a substrate that has undergone vacuum sputtering anti-electromagnetic interference (EMI) film and has a bad film surface as a sample, and treat it with a sandblasting machine at room temperature. Coating is carried out after the sanding is completed, and the subsequent film layer after coating can reach the standard of 3B or above in the 100-grid test.

Embodiment 2

[0011] Select a substrate that has undergone vacuum sputtering anti-electromagnetic interference (EMI) film and has a bad film surface as a sample, and treat it with a sandblasting machine at room temperature. Coating is carried out after the sanding is completed, and the subsequent film layer after coating can reach the standard of 3B or above in the 100-grid test.

[0012] It is proved by the above-mentioned examples that, on the one hand, the bad film surface on the surface of the substrate can be completely or partially knocked down by adopting this technical process; The adhesion effect between them can avoid the impact of rebounding grit on the appearance surface as much as possible.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an imperfect film surface processing method of a vacuum sputtering EMI film, which is characterized by the following: sputtering the imperfect film surface of the vacuum sputtering EMI film with sand ejector in the ambient temperature condition (the working pressure is 0.1-0.5Mpa; the pressure source is air compressor; the sand material is brown fused alumina; the size of the sand material is NO.60-NO.120). The method can improve the imperfect the imperfect phenomenon by coating the film on the basic material again, which avoids the environment pollution, provides the simple operation, and improves the production efficiency.

Description

technical field [0001] The invention relates to a method for processing defective film surfaces, in particular to a method for processing defective film surfaces of vacuum sputtering. Background technique [0002] With the continuous development of science and technology, the precision and sensitivity of various electronic components continue to increase, so there are more stringent requirements for the prevention and control of electromagnetic interference (EMI), in order to avoid malfunction and damage of electronic components, and in electromagnetic interference In terms of prevention and control, the metal magnetic shield (borrowing the metal film layer to isolate the electromagnetic wave) is a traditional simple and effective application method, but the current industry usually uses the vacuum sputtering process to form the anti-electromagnetic interference (EMI) film layer. However, the vacuum sputtering anti-electromagnetic interference (EMI) film layer may cause defe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/54
Inventor 覃飞祥陈志明
Owner MITAC PRECISION TECH CO LTD SHUNDE DISTRICT FOSHAN CITY