Improved three-dimensional read-only memory

A read-only memory and three-dimensional storage technology, applied in the field of integrated circuits, can solve problems such as difficult performance

Inactive Publication Date: 2008-01-23
张国飙
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0005] 3D-M has the advantages of low cost and high density, but because its storage elements are generally composed of non-single-crystal semiconductor materials, its performance is still difficult to compare with conventional solid-state memories based on single-crystal semiconductors.

Method used

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Embodiment Construction

[0032] 1. Read and write speed

[0033]In this section, 3D-ROM is taken as an example to improve the reading and writing speed, and the circuit design of 3D-M transistor level, especially the design of 3D-M core, 3DcM (cached 3D-M) and programming circuit, is done. Further improvement. Here, the 3D-M core refers to the 3D-M array and the most basic peripheral circuits capable of reading 3D-M data. In order to improve the reading speed, from the perspective of the circuit, it is better to use the sense amplifier and full read mode, and adopt self-timer; from the perspective of the system, it is better to use the eRAM in 3DcM to hide the first access time of 3D-M. Correspondingly, although the performance of a single 3D-M element is still difficult to compare with conventional storage elements, however, through system integration, its collective performance can be compared with conventional memory, or even better. In order to increase the write speed, it is better to use paral...

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Abstract

The invention proposes a dual-polarized storage element in a 3D-ROM, which comprises two secondary films with different basal materials or with different interfaces for its upper and lower pole. The invention is able to enhance the size of 3D-ROM unit array and improve its integration performance. Besides, the invention provides a seamless storage element in 3D-ROM that can improve the yield of 3D-ROM.

Description

[0001] The present invention is a divisional application of the invention patent application with the application number 02150190.4, the application date is November 17, 2002, and the invention title is "design of three-dimensional memory". technical field [0002] The present invention relates to the field of integrated circuits, more specifically, to the design of three-dimensional read-only memories. Background technique [0003] In a three-dimensional integrated circuit (abbreviated as 3D-IC), one or more three-dimensional integrated circuit layers (abbreviated as 3D-IC layers) are stacked on a substrate in a direction perpendicular to the substrate. A 3D-IC can have various functions, such as analog functions, digital functions, memory functions, and the like. Because the memory has error correction capability, it can tolerate a large defect density; and its power consumption is low, and there is no heat dissipation problem, so the memory is especially suitable for thre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C17/10
Inventor 张国飙
Owner 张国飙
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