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Method for manufacturing Y wave-guide integrated optics device lithium niobate chip

An optical device and waveguide integration technology, applied in optical components, optical waveguide, optical, etc., can solve problems such as device waveform tilt, and achieve the effects of avoiding corrosion, reducing environmental pollution, and reducing quantity

Active Publication Date: 2008-02-06
BEIJING AEROSPACE TIMES OPTICAL ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technical problem to be solved by the present invention is: to overcome the above shortcomings, provide an easy-to-control waveguide chip preparation method, solve the problem of process consistency, and reduce environmental pollution; the technical problem further solved by the present invention is to avoid The device waveform tilt problem of the

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  • Method for manufacturing Y wave-guide integrated optics device lithium niobate chip

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] The realization steps of the present invention are as follows:

[0026] 1. Transfer the waveguide device pattern from the photolithography plate to the lithium niobate wafer by photolithography, and form the Y waveguide device pattern of photoresist on it;

[0027] 2. Growth of SiO on lithium niobate wafers by sputtering 2 , and lift off, then SiO is formed on the lithium niobate wafer 2 The waveguide mask pattern;

[0028] 3. The proton exchange process is as follows:

[0029] (1) 300 grams of pure benzoic acid are weighed and put into a quartz proton exchange cup;

[0030] (2) SiO with the mask prepared 2 Put the lithium niobate wafer on the quartz exchange fixture and put it into the quartz exchange cup together, but it should be noted that the lithium niobate wafer is only suspended in the exchange cup and does not contact with benzoic acid;

[0031] (3) Place the proton exchange cup in the constant temperature zone of the proton exchange furnace;

[0032] (4)...

Embodiment 2

[0054] 1. Transfer the waveguide device pattern from the photolithography plate to the lithium niobate wafer by photolithography, and form the Y waveguide device pattern of photoresist on it;

[0055] 2. Growth of SiO on lithium niobate wafers by chemical vapor deposition (PECVD) 2 , and lift off, then SiO is formed on the lithium niobate wafer 2 The waveguide mask pattern;

[0056] 3. The proton exchange process is as follows:

[0057] (1) Weigh 400 grams of pure benzoic acid and put it into a quartz proton exchange cup;

[0058] (2) SiO has been prepared 2 The masked lithium niobate wafer is placed on the quartz exchange fixture and put into the quartz exchange cup together, but it should be noted that the wafer is only suspended in the exchange cup and does not contact with pure benzoic acid;

[0059] (3) Place the proton exchange cup in the constant temperature zone of the proton exchange furnace;

[0060] (4) Open the proton exchange furnace and lower its temperature...

Embodiment 3

[0082] 1. Transfer the waveguide device pattern from the photolithography plate to the lithium niobate wafer by photolithography, and form the Y waveguide device pattern of photoresist on it;

[0083] 2. Growth of SiO on lithium niobate wafers by chemical vapor deposition (PECVD) 2 , and lift off, then SiO is formed on the lithium niobate wafer 2 The waveguide mask pattern;

[0084] 3. The proton exchange process is as follows:

[0085] (1) Weigh 500 grams of pure benzoic acid and put it into a quartz proton exchange cup;

[0086] (2) Put the lithium niobate wafer that has been prepared with a silicon dioxide mask on the quartz exchange fixture and put it into the quartz exchange cup together, but it should be noted that the lithium niobate wafer is only suspended in the exchange cup and does not exposure to benzoic acid;

[0087] (3) Place the proton exchange cup in the constant temperature zone of the proton exchange furnace;

[0088] (4) Open the proton exchange furnac...

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Abstract

The present invention discloses a fabricating method for Y waveguide integrated optical devices -lithium niobate chips, mainly and comprises such processes as fabricating a SiO2 waveguide mask on a substrate, proton exchanging, annealing, electrode stripping, electrode galvanizing, chip cutting and end surface polishing. The present invention uses pure benzoic acid as the source of proton exchanging, the temperature for proton exchanging is between 150 DEG C and 170 DEG C, and the period of time is between 170 min and 210 min. In order to prevent the waveform from being oblique, after the proton exchanging, the SiO2 waveguide mask is removed by corroding firstly, the wafer is cleaned, a SiO2 blocking layer is grown on the lithium niobate wafer again, and then anneal is performed. The present invention uses pure benzoic acid as the proton source, enhancing the consistency of the technique processes and reducing the pollution to the environment of the lab; by corroding SiO2 waveguide mask and re-growing the waveguide blocking layer, the waveform of the devices are ensured not to oblique and distort.

Description

technical field [0001] The invention relates to a method for preparing a chip of a lithium niobate-based integrated optical device, in particular to a method for preparing a chip for a Y waveguide integrated optical device based on an annealing proton exchange method. Background technique [0002] The Y waveguide integrated optical device is the key device of the closed-loop fiber optic gyroscope, which is used to realize the closed-loop control of the fiber optic gyroscope. It integrates beam splitting / combining couplers, polarizers, and strip waveguide phase modulators on a lithium niobate chip to realize 3dB splitting, polarization, and closed-loop feedback functions. [0003] At present, Y waveguide chips are basically prepared by annealing proton exchange method, which mainly includes the steps of preparing waveguide mask on the substrate, proton exchange, annealing, end surface polishing, waveguide adjustment and inspection. In proton exchange, if benzoic acid is used...

Claims

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Application Information

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IPC IPC(8): G02B6/13G02B6/134G02B6/10
Inventor 徐宇新李其聪刘福民黄韬王军龙
Owner BEIJING AEROSPACE TIMES OPTICAL ELECTRONICS TECH