Superbranched poly-siloxane base photoresist

A polysiloxane-based and polysiloxane technology, applied in the field of photoresist, can solve the problems that the cured product cannot be converted into a functional device, and the viscosity of the photo-cured resin is high, so as to achieve excellent heat resistance and good heat resistance , the effect of high reactivity

Inactive Publication Date: 2008-02-13
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to overcome the shortcomings of existing photocurable resins with high viscosity and cured products that cannot be

Method used

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  • Superbranched poly-siloxane base photoresist
  • Superbranched poly-siloxane base photoresist

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0013] Example one of hyperbranched polysiloxane-based photoresist:

[0014] 2g hyperbranched polysiloxane, 0.5g monofunctional monomer and 75mg photoinitiator Darocur 1173 were stirred at room temperature and protected from light for 10 minutes to obtain a photoresist.

Example Embodiment

[0015] Hyperbranched polysiloxane-based photoresist example two:

[0016] 2g hyperbranched polysiloxane, 1g difunctional monomer and 100mg photoinitiator IHT-PI 185 were stirred at room temperature and protected from light for 10 minutes to obtain a photoresist.

Example Embodiment

[0017] Example three of hyperbranched polysiloxane-based photoresist:

[0018] 2g of hyperbranched polysiloxane, 1g of monofunctional monomer, 50mg of photoinitiator IHT-PI 185 and 40mg of photoinitiator Darocur 1173 were stirred for 10 minutes at room temperature and protected from light to obtain a photoresist.

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Abstract

The invention discloses a hyperbranched polysiloxane-based photoresist. In order to overcome the shortcomings of existing photocurable resins with high viscosity and cured products that cannot be converted into functional devices, the invention provides a hyperbranched polysiloxane based photoresist. The photoresist is matrix resin, and its components are 30-90% hyperbranched polysiloxane, 10-70% active diluent and 2-5% photoinitiator. The invention contains methacryloyl groups, has the characteristics of low viscosity, multi-functionality, high reactivity, etc., can be quickly cured by light, and the cured product can be converted into silicon-based ceramics.

Description

technical field [0001] The invention belongs to the field of polymer radiation chemistry and relates to a photoresist. Background technique [0002] With the rapid development of micro-nano technology, the method of preparing micro / nano-electromechanical systems (M / NEMS) using UV-LIGA technology has been greatly developed. Polymethyl methacrylate (PMMA) and Su-8 epoxy resin The representative near-ultraviolet photoresist has been widely used in this field. With the development of micro-nano processing technology to the sub-micron and nano-scale, the ultra-short ultraviolet (EUV) lithography technology with 193nm, 157nm and shorter wavelengths has become the development direction of the next generation lithography technology. The absorption at 193nm and 157nm is too high to be used, and polymethacrylate is the preferred material for 193nm photoresist due to its high transparency at 193nm; research shows that: silicon polymers (such as polysiloxane, etc.) Good permeability, ...

Claims

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Application Information

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IPC IPC(8): G03F7/027G03F7/028G03F7/075
Inventor 范晓东张国彬孔杰刘郁杨
Owner NORTHWESTERN POLYTECHNICAL UNIV
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