Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Superbranched poly-siloxane base photoresist

A polysiloxane-based and polysiloxane technology, applied in the field of photoresist, can solve the problems that the cured product cannot be converted into a functional device, and the viscosity of the photo-cured resin is high, so as to achieve excellent heat resistance and good heat resistance , the effect of high reactivity

Inactive Publication Date: 2008-02-13
NORTHWESTERN POLYTECHNICAL UNIV
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to overcome the shortcomings of existing photocurable resins with high viscosity and cured products that cannot be converted into functional devices, the present invention provides a photoresist with hyperbranched polysiloxane as the matrix resin

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Superbranched poly-siloxane base photoresist
  • Superbranched poly-siloxane base photoresist

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] 2g hyperbranched polysiloxane, 0.5g monofunctional monomer and 75mg photoinitiator Darocur 1173 were magnetically stirred at room temperature for 10min in the dark to obtain a photoresist.

Embodiment 2

[0016] 2g of hyperbranched polysiloxane, 1g of difunctional monomer and 100mg of photoinitiator IHT-PI 185 were magnetically stirred at room temperature for 10min in the dark to obtain a photoresist.

Embodiment 3

[0018] 2g of hyperbranched polysiloxane, 1g of monofunctional monomer, 50mg of photoinitiator IHT-PI 185 and 40mg of photoinitiator Darocur 1173 were magnetically stirred at room temperature for 10 minutes in the dark to obtain a photoresist.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Weight average molecular weightaaaaaaaaaa
Login to View More

Abstract

The invention discloses a hyperbranched polysiloxane-based photoresist. In order to overcome the shortcomings of existing photocurable resins with high viscosity and cured products that cannot be converted into functional devices, the invention provides a hyperbranched polysiloxane based photoresist. The photoresist is matrix resin, and its components are 30-90% hyperbranched polysiloxane, 10-70% active diluent and 2-5% photoinitiator. The invention contains methacryloyl groups, has the characteristics of low viscosity, multi-functionality, high reactivity, etc., can be quickly cured by light, and the cured product can be converted into silicon-based ceramics.

Description

technical field [0001] The invention belongs to the field of polymer radiation chemistry and relates to a photoresist. Background technique [0002] With the rapid development of micro-nano technology, the method of preparing micro / nano-electromechanical systems (M / NEMS) using UV-LIGA technology has been greatly developed. Polymethyl methacrylate (PMMA) and Su-8 epoxy resin The representative near-ultraviolet photoresist has been widely used in this field. With the development of micro-nano processing technology to the sub-micron and nano-scale, the ultra-short ultraviolet (EUV) lithography technology with 193nm, 157nm and shorter wavelengths has become the development direction of the next generation lithography technology. The absorption at 193nm and 157nm is too high to be used, and polymethacrylate is the preferred material for 193nm photoresist due to its high transparency at 193nm; research shows that: silicon polymers (such as polysiloxane, etc.) Good permeability, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/027G03F7/028G03F7/075
Inventor 范晓东张国彬孔杰刘郁杨
Owner NORTHWESTERN POLYTECHNICAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com