Method for shrinking pi phase migration lithographic feature size using metal layer

Abstract

The utility model discloses a method utilizing a metal layer to reduce the lithography feature size of Pi phase offset, which is characterized in that: the depth H causing the optical path difference of Pi phase is calculated depending on the index of refraction of PDMS; a high and steep structure that the depth of the relief sculpture is H is made; the PDMS is dumped on the surface of the high and steep structure, solidified in the environment of 30 to 90 DEG C, after cooled, the film of PDMS solidified is stripped, and a phase shift lithography template of Pi phase is formed; the photoresist is coated on the surface of the substrate, and the metal layer is evaporated on the surface of the photoresist; the graphics surface of the phase shift lithography template of Pi phase is tightly attached on the metal layer of the surface of the substrate; the phase shift lithography template of Pi phase of PDMS is vertically lighted to exposure; the template of PDMS is pulled off, and the metal layer of the surface of the slushing compound is removed; the slushing compound is developed, and finally the needed lithography lines are formed. The utility model utilizes the metal layer to secondary modulate the light field injecting from the phrase mutant structure, and reduces the width of the lines into 1 / 2 of the original width, providing a good way to prepare the structure of sub-hundred-nanometer.

Description

technical field [0001] The invention belongs to the technical field of micro-nano structure processing, in particular to a method for reducing the feature size of π-phase offset photolithography by using a metal layer. Background technique [0002] In recent years, with the rapid development of micro-nano processing technology and nanomaterials, the electromagnetic properties of micro-nano metal structures are receiving more and more attention. The interaction of light with surface micro-nano metal structures produces a series of new and exotic physical phenomena. For example, in 1998, French scientist Ebbesen and his collaborators discovered the phenomenon of extraordinary enhancement (Extraordinary Optical Transmission) of light passing through a subwavelength metal hole array. The research of H.J.Lezec et al. further showed that: when the light passes through the sub-wavelength metal nanohole, its transmittance can not only be enhanced, but also the diffraction angle of ...

AI Technical Summary

Problems solved by technology

However, it is very difficult to further reduce the feature size of lithographic lines

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