Sub-wavelength continuous surface micro-structure preparation method based on dry method etching loading effect
A technology of dry etching and loading effect, applied in microstructure technology, microstructure device, manufacturing microstructure device, etc., can solve the problem that the processing range is difficult to expand to the sub-wavelength scale.
Inactive Publication Date: 2008-02-20
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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[0004] The technical problem to be solved in the present invention is: in view of the problem that the processing range of the existing continuous surface microstructure preparation technology is difficult to expand to the sub-wavelength scale, a sub-wavelength continuous surface microstructure based on dry etching load effect is proposed Preparation method to realize sub-wavelength continuous surface structure forming
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[0019] The present invention will be described in detail below in conjunction with specific embodiments, but the scope of protection of the present invention is not limited to the following examples, and should include all content in the claims.
[0020] Concrete implementation process of the present invention is as follows:
[0021] (1) First select semiconductor silicon as the base material, and perform dry etching calibration on the equipment used, and establish the relationship between the slit width and the relief depth in the case of etching for 6 minutes, as shown in Figure 1;
[0022] (2) According to the calibration result in Fig. 1, according to the relief depth of the target structure at different positions, select slit structures with different widths. After all selections are completed, the mask pattern for dry etching can be used; as shown in Figure 2;
[0023] (3) preparing a material on the surface of the semiconductor silicon substrate as a mask pattern of me...
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The utility model discloses a microstructure preparation method of the sub-wavelength continuous surface based on dry etching load effect. The utility model adopts the technical proposal that: firstly, substrate material is selected, dry etching equipment is demarcated and a relation is created between slit width and etching rate; secondly, on the base of the result of the demarcation, the dry etching mask patterns matched with the object structure is designed and the pattern of metallic material on the surface of the substrate is made; thirdly, the dry etching on the substrate is made according to etching parameters in the calibration. After the completion of the etching, the substrate material is polished by wet-etching, and thus the object structure is formed. The utility model realizes the forming of the microstructure of the sub-wavelength continuous surface by utilizing the load effect in dry etching. Additionally, the utility model can also realize the forming of the continuous surface structure when the dimension is more than the wavelength making a wide application in novel functional devices based on surface plasma.
Description
technical field [0001] The invention belongs to the technical field of micro-nano structure processing, in particular to a method for preparing sub-wavelength continuous surface microstructures based on dry etching load effect. Background technique [0002] In recent years, with the rapid development of micro-nano processing technology and nanomaterials, the electromagnetic properties of micro-nano metal structures are receiving more and more attention. The interaction of light with surface micro-nano metal structures produces a series of new and exotic physical phenomena. For example, in 1998, French scientist Ebbesen and his collaborators discovered the phenomenon of extraordinary enhancement (Extraordinary Optical Transmission) of light passing through a subwavelength metal hole array. The research of H.J.Lezec et al. further showed that: when the light passes through the sub-wavelength metal nanohole, its transmittance can not only be enhanced, but also the diffraction ...
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IPC IPC(8): G03F7/00B81C1/00
Inventor 董小春杜春雷李飞潘丽
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI