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Intermediate transfer chamber, substrate processing system, and exhaust method for the intermediate transfer chamber

An exhaust method and technology for conveying chambers, which are used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to slow down gas flow, prevent defects, and prevent particle adhesion.

Inactive Publication Date: 2008-02-20
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Even if there are no particles that become nuclei in the chamber, various ions in the gas will become condensation nuclei, or water molecules will condense and grow larger. As long as the chamber contains moisture, this condensation of water will sometimes occur. and solidification phenomenon, and will cause serious problems

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  • Intermediate transfer chamber, substrate processing system, and exhaust method for the intermediate transfer chamber
  • Intermediate transfer chamber, substrate processing system, and exhaust method for the intermediate transfer chamber
  • Intermediate transfer chamber, substrate processing system, and exhaust method for the intermediate transfer chamber

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Embodiment Construction

[0057] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0058] First, a substrate processing system according to an embodiment of the present invention will be described.

[0059] FIG. 1 is a cross-sectional view showing a schematic structure of a substrate processing system according to an embodiment of the present invention.

[0060] In FIG. 1 , a substrate processing system 1 includes a processing module for performing plasma processing such as RIE (Reactive Ion Etching) processing or ashing processing on a semiconductor wafer (hereinafter referred to as "wafer") W as a substrate. (Process Module) (hereinafter referred to as "P / M") 2; an atmospheric system for taking out the wafer W from the Front Opening Unified Pod (Front Opening Unified Pod: FOUP) 5 as a container for storing the wafer W The transport device 3; and the process of loading and unloading the wafer W from the atmospheric transport device 3 to the P / M2 or ...

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Abstract

An intermediate transfer chamber is provided to suppress adiabatic expansion of inner gas on a substrate by controlling exhaust conductance on at least a support part of a substrate and a main surface opposite to the support part. An exhaust apparatus exhausts the inside of an intermediate transfer chamber to reduce the inner pressure of the intermediate transfer chamber from a first pressure to a second pressure. In the exhaust process of the exhaust apparatus, a conductance control apparatus controls exhaust conductance on at least a support part for supporting a substrate and a main surface opposite to the support part. The conductance control apparatus is made of a plate-type member(90) confronting the main surface of the substrate.

Description

technical field [0001] The invention relates to an intermediate transfer chamber, a substrate processing system and an exhaust method for the intermediate transfer chamber, in particular to an intermediate transfer chamber for vacuum exhaust during substrate transfer. Background technique [0002] A substrate processing system that performs plasma processing on wafers as substrates includes: a processing module that accommodates wafers and performs plasma processing; a load lock module that serves as an intermediate transfer chamber for loading wafers into the processing module; and a container for accommodating a plurality of wafers. The load module that removes the wafer from the load lock module. [0003] Normally, the load lock module of a substrate processing system has the following functions: After receiving wafers under atmospheric pressure, after the chamber is evacuated to a specified pressure, the gate valve on the side of the processing module is opened, and the ...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/3065
CPCH01L21/67201H01L21/67276H01L21/67742H01L21/67769
Inventor 守屋刚中山博之近藤圭祐冈宽树
Owner TOKYO ELECTRON LTD
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