Method for manufacturing semiconductor device
A manufacturing method and semiconductor technology, which is applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of lower semiconductor device manufacturing yield and long-term reliability of semiconductor devices, and achieve the effect of preventing characteristic degradation
Inactive Publication Date: 2008-02-27
PANASONIC CORP
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Problems solved by technology
As a result, a leak path is formed on the semiconductor device by the remaining titanium nitride film, causing a problem that the manufacturing yield of the semiconductor device decreases.
In addition, even when a complete leak is not formed, the long-term reliability of the semiconductor device is reduced
Method used
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Embodiment Construction
[0039] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following embodiments, the present invention is embodied as an example of forming a silicide film of a semiconductor device including a MIS transistor having a silicide gate.
[0040] FIG. 1 is a cross-sectional view illustrating a process of manufacturing a semiconductor device according to an embodiment of the present invention. First, as shown in FIG. 1(a), a silicon oxide film with a thickness of 10 nm or less is formed by thermal oxidation or the like on a region of the silicon substrate 11 partitioned by trench-type element isolation (not shown). formed gate insulating film 12. On the gate insulating film 12, a polysilicon film having a thickness of 200 nm or less is deposited by a CVD (Chemical Vapor Deposition) method. A known lithography technique and dry etching technique are applied to the polysilicon film to form a gate electrode 13 made of ...
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Abstract
In the method for manufacturing a semiconductor device capable of forming stably low resistance silicide film relating to the present invention. First, a metal film (17) is formed onto a substrate in the state where a silicide forming region is exposed onto the surface of silicon substrate (11). Next, thermal processes at pressure higher than atmosphere are conducted to the substrate (11) where the metal film (17) is formed, and a silicide film (18a, 18b) is formed by reacting silicon contained in the silicide forming region with the metal film (17). Subsequently, after an unreacted metal film is removed during the thermal process, crystalline phase transition is initiated via the thermal process, and low resistance of the silicide film (18a, 18b) formed on the substrate is realized. These steps enable the stable formation of the silicide film with low resistance.
Description
technical field [0001] The present invention relates to a method of manufacturing a semiconductor device and a method of manufacturing a semiconductor device having a silicide film. Background technique [0002] With the recent miniaturization of semiconductor devices, signal delays due to increases in sheet resistance of impurity regions constituting source and drain regions of transistors and increases in wiring resistance of gate electrodes have become noticeable. As a countermeasure against this, a technique for reducing the resistance of the impurity region and the gate electrode by forming a silicide film on the impurity region and the gate electrode is widely used. [0003] The above-mentioned silicide film is formed by depositing a metal film such as titanium, cobalt, or nickel on the semiconductor substrate exposed on the upper surface of the impurity region and the upper surface of the gate electrode made of polysilicon, followed by heat treatment. The heat treatm...
Claims
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IPC IPC(8): H01L21/3205H01L21/28H01L21/336
CPCH01L21/28518H01L21/24
Inventor 舟瀬谕志
Owner PANASONIC CORP