Method for cleaning surface of anodize parts

Abstract

The invention provides a cleaning method for surface of anode oxidized component. The core of the method is as follows that organic solution is firstly used for cleaning of the surface the component; then alkaline solution and acid solution is used for cleaning of the surface of the component in turn but not in sequence; at last, ultrasonic wave is adopted to clean the component. Removing of settlings on the surface of the component can be realized. The method is an effective and simple method without destructiveness for cleaning of the anode oxidized surface and mainly comprises that organic solution, alkaline solution, diluted acid solution and ultrasonic cleaning is used for removing of anode oxidation and treatment of contamination on the surface. The method cannot lead to flaking of anode oxidation and newly anode oxidation treatment of the component even if micro-damage is produced.

Description

technical field [0001] The invention relates to a method for cleaning objects, in particular to a method for cleaning the surface of anodized parts. Background technique [0002] With the development of semiconductor chip technology, the technology node has developed from 250nm to 65nm, or even below 45nm, and the size of silicon wafers has also increased from 200mm to 300mm. Under such circumstances, the cost of each silicon wafer becomes higher and higher . The technological requirements for processing silicon wafers are becoming more and more stringent. The processing of semiconductors needs to go through multiple processes, including deposition, photolithography, etching, etc. The etching process is one of the more complicated ones. The state of the plasma and various process parameters during the plasma etching process are related to the etching results. D. [0003] When the etching machine is performing a normal etching process, products in the etching process will ...

AI Technical Summary

Problems solved by technology

During the cleaning process, because the characteristics of the surface of anodized parts are different from those of other metal parts, this method is not only time-consuming and labor-intensive in the process of removing polymers, but also easily damages the surface of anodized parts, and the cleaning effect on polymers is not good. Very good, dark gray stains remain

[0005] The etching reaction chamber is usually made of anodized aluminum. The polycrystalline etching anodized parts we refer to here refer to the anodic oxidation in the process chamber for plasma etching the polysilicon layer on the silicon wafer. These anodized parts are in direct contact with the process chamber, and impurities in various processes are easily deposited on their surfaces, and cannot be pumped away from the pumping chamber

However, the pollutants deposited on the surface of the anodized layer will continuously release various impurity particles during the process, which will affect the stability of the process and lead to the increase of particles on the surface of the silicon wafer.

However, anodic oxidation usually only forms a very thin aluminum oxide layer on the surface of the aluminum material. A slight carelessness in the cleaning process may cause the aluminum oxide layer to be damaged or fall off, resulting in the scrapping of the parts.