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Nitride semiconductor element and production method therefor

A nitride semiconductor, semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor lasers, etc., can solve the problems of difficulty in cutting wafers, cutting chips, reducing yield, and rising costs.

Inactive Publication Date: 2008-04-30
ROHM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, sapphire substrates and SiC substrates are very hard materials, and there are problems such as difficulty in cutting from wafers into chips, and the fact that splitting chips lowers the yield and increases costs.

Method used

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  • Nitride semiconductor element and production method therefor
  • Nitride semiconductor element and production method therefor
  • Nitride semiconductor element and production method therefor

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Embodiment Construction

[0046] Next, the nitride semiconductor device of the present invention and its manufacturing method will be described with reference to the accompanying drawings. According to the nitride semiconductor element of the present invention, as shown in a cross-sectional explanatory diagram of a nitride semiconductor light emitting element (LED chip) as an embodiment in FIG. 1 , when a nitride semiconductor layer is laminated on a substrate 1 to form a nitride semiconductor element , with substrate 1 made of Mg x Zn 1-x O (0≤x≤0.5) is composed of a zinc oxide-based compound, and the substrate 1 is provided with In y Ga 1-y The first nitride semiconductor layer 2 composed of N (0<y≤0.5), the method of forming a semiconductor element on the first nitride semiconductor layer 2 (in the example shown in FIG. 1, the method of forming an LED light emitting layer) Nitride semiconductor layers 3 to 7 are laminated.

[0047] That is, the present invention is characterized in that although...

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Abstract

A nitride semiconductor element having a structure of improving the crystallinity of a growing nitride semiconductor and capable of very easy peeling off and chip-forming of a substrate, and a production method therefor. When a nitride semiconductor element in which nitride semiconductor layers are laid on a substrate (1) is formed, the substrate consists of MgxZn1-xO (0 H01L 33 / 00 H01L 21 / 205 H01L 21 / 338 H01L 29 / 26 H01L 29 / 778 H01L 29 / 812 H01S 5 / 323 4 15 3 2006 / 5 / 8 101171694 2008 / 4 / 30 000000000 Rohm Co., Ltd. Japan Nakahara Ken longchun 11245 Japan 2005 / 5 / 9 136180 / 2005 2007 / 11 / 9 PCT / JP2006 / 309242 2006 / 5 / 8 WO2006 / 121000 2006 / 11 / 16 Japanese

Description

technical field [0001] The present invention relates to a semiconductor device using a nitride semiconductor crystal layer, such as a light emitting device such as a light emitting diode (LED) or a laser diode using a nitride semiconductor, and a transistor device such as a HEMT, and a method for manufacturing the same. In more detail, it relates to growing a nitride semiconductor layer on a zinc oxide-based compound substrate to reduce the difference in lattice constant between the substrate and the nitride semiconductor layer, to grow a nitride semiconductor layer excellent in crystallinity, and to remove the substrate , can also be easily removed by wet etching and its manufacturing method. Background technique [0002] In recent years, nitride semiconductor light emitting elements such as blue light emitting diodes (LEDs) and laser diodes using nitride semiconductors have been put into practical use. An LED emitting blue light using this nitride semiconductor is formed,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L21/205H01L21/338H01L29/26H01L29/778H01L29/812H01S5/323H01L33/06H01L33/10H01L33/22H01L33/28H01L33/32
CPCH01L21/0251H01L21/02458H01L21/02414H01S5/32341H01L21/02507H01S5/0218H01L29/7787H01S5/0211H01L21/02403H01L29/2003H01L33/0079H01S5/0217H01L33/007H01L21/0254H01L33/0093
Inventor 中原健
Owner ROHM CO LTD
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