Annealing method for producing large area two-side thallium series film

Abstract

The invention discloses an annealing method for preparing large area double-faced thallium based membrane. The invention comprises the steps that a plurality of single crystal tablets which has the same thickness and the same material and crystal orientation with the substrate of the double-faced forehand membrane is adopted, two thallium source with the same shape and after high temperature solid reaction sintering and a piece of sample equipped with the double-faced forehand membrane for annealing are equidistantly divided along the vertical direction in a vertically symmetrical way, and the sample equipped with the double-faced forehand membrane is arranged in the middle of the thallium source and the center aimed at the center of the upper and the lower thallium source with larger area than the membrane; the above integral structure is reversed into a sealed crucible, and put into a pipe furnace together with the crucible; then the annealing is performed. The electrical property of the double-faced membrane of the sample after annealing has very strong consistency and very good uniformity.

Description

technical field [0001] The invention belongs to the field of post-treatment of thin films, and specifically relates to an annealing method for preparing large-area double-sided thallium-based thin films. Background technique [0002] In recent years, the research on high critical temperature oxide superconducting thin films and their devices has achieved rapid development. Many devices and subsystems have gone out of the laboratory and entered the field of practical application. There are already thousands of mobile communication receiver front ends using high temperature superconducting filters. High-quality large-area double-sided high-temperature superconducting thin films are one of the necessary conditions for the preparation of high-temperature superconducting microwave devices with high band edge steepness and low insertion loss at the microwave low-frequency end. So far, the technologies for preparing high-temperature superconducting thin films can be roughly divide...

AI Technical Summary

Problems solved by technology

For example, the vertical placement of the thallium source and the precursor film will cause the thallium component in the film to segregate along the vertical direction (Chen H.Q, Johansson L.-G and Ivanov Z G 2000 Appl.Phys.Lett.77 1197; Ginley D S, Kwak J F, Venturini E L, Morosin B and Baughman R J1989 Physica C 160 42); as another example, wrapping the adjacent thallium source and precursor film with gold foil will cause local peeling and uneven patterns on the film surface

There are quite a lot of reported post-annealing layout structures, some of which are more complicated, and some are more expensive, such as the use of special gold crucibles with high thermal conductivity and chemical stability (Schneidewind H, Manzel M, Bruchlos G and KirschK 2001 Supercond.Sci.Technol .14 ​​200) or disposable quartz sealed tubes (Ginley D S "Tl-based HTSC films for microelectronic applications" 9th chapter in 'Thallium-Based High-Temperature Superconductor s'edited by Hermann A M and Yakhmi S V)

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