A method of manufacturing a mems element
A technology of components and micro-electromechanical components, which is applied in the field of manufacturing electronic devices, can solve the problem of difficulty in controlling the removal of sacrificial layers
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[0043] 1-4 show a first embodiment of the method of the invention in cross-sectional view.
[0044] FIG. 1 shows a substrate 10 having a first surface 1 , and a second surface 2 . In this case, the substrate 10 is a silicon substrate, which is doped n-type or p-type so as to be sufficiently conductive. The dopants extend in particular to a depth of 10-20 microns. On the first surface 1 , the substrate 10 has been locally oxidized and at least one pillar 15 , the sacrificial layer 12 and other parts of the oxide layer 11 have been formed. This oxidation is performed by a process known as shallow trench oxidation as described in S.M. Sze, Semiconductor Physics and Technology, in this example the MEMS element is formed with first and second gaps as shown in the other figures. For this purpose, sacrificial layer 12 is structured again to form recesses 14 . Although not shown here, the substrate 10 may also include any other components, in particular transistors and diodes.
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