Angle lapping device for silicon chip edge

Abstract

The present invention relates to a bevelling device of the edge of a silicon chip. The present invention comprises a wheelhead and an abrading disk; the lower surface of the wheelhead is of a circular plane, and a vacuum pipeline arranged in the wheelhead can absorb the silicon chip on the outer layer of the lower circular surface of the wheelhead; the wheelhead also comprises a magnet layer and a cushioning layer, and the magnet layer and the abrading disk generate magnetic attraction which ensures that the silicon chip is uniformly stressed; the cushioning layer ensures that the silicon chip and the wheelhead are tightly combined together and not injured by collision. The upper surface of the abrading disk is provided with a concave surface, in the process of bevelling, the silicon ship is absorbed by the wheelhead to be contacted with the concave surface of the abrading disk, the wheelhead and the abrading disk relatively rotate, and meanwhile, the edge of the silicon chip is bevelled on the abrading disk. The present invention resolves the problems that the traditional manual bevelling operation process is inaccurate, errors can be easily produced, and the bevelled mesa is uneven, so the present invention ensures that the operation is simple, the accuracy is improved, the cost is greatly saved, and the efficiency is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an angle grinding device for the edge of a silicon wafer. Background technique [0002] With the advancement of power device manufacturing technology, power thyristors and rectifiers are also developing in the direction of high current and high voltage. In order to increase the operating voltage of the device, it is necessary to increase the internal breakdown voltage and the surface breakdown voltage of the chip at the same time. When the internal breakdown voltage of the chip is determined, how to increase the surface breakdown voltage so that it is not less than the internal breakdown voltage is very important. In the current technical field, the method commonly used internationally and domestically is to grind one or more angles on the edge of the silicon wafer of the chip to reduce the surface electric field strength on the silicon edge of the chip, ther...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problems of imprecise manual operation, prone to errors, and uneven surface of the ground silicon wafer.

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