Angle lapping device for silicon chip edge
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ZHUZHOU CSR TIMES ELECTRIC CO LTD
- Publication Date
- 2008-07-09
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an angle grinding device for the edge of a silicon wafer. Background technique
[0002] With the advancement of power device manufacturing technology, power thyristors and rectifiers are also developing in the direction of high current and high voltage. In order to increase the operating voltage of the device, it is necessary to increase the internal breakdown voltage and the surface breakdown voltage of the chip at the same time. When the internal breakdown voltage of the chip is determined, how to increase the surface breakdown voltage so that it is not less than the internal breakdown voltage is very important. In the current technical field, the method commonly used internationally and domestically is to grind one or more angles on the edge of the silicon wafer of the chip to reduce the surface electric field strength on the silicon edge of the chip, ther...