HVMOS and semiconductor device integrating HVMOS and CMOS

Abstract

The invention provides an HVMOS and an integrated HVMOS and a CMOS semiconductor device. The HVMOS comprises a substrate, a channel, a gate and a source / drain, wherein the source / drain comprises a light doping area and a heavy doping area, wherein the light doping area is arranged beside the channel and is next to the channel, and the heavy doping area is next to the light doping area, another source / drain comprises another light doping area and another doping area, wherein the another light doping area is arranged beside the channel and is next to the channel, and the another heavy doping area is next to the another light doping area. A reverse doping well whose doping type is opposite to the source / drain comprises the source / drain, and another reverse doping well whose doping type is opposite to the source / drain is located between the another light doping well of the another source / drain and the reverse doping well. The HVMOS fully uses prior process of the CMOS, thereby greatly reducing the number of mask layers, and has the advantages of small conduction resistance, low parasitic capacitance, fast switch speed, high switching frequency and low cost and the like.

Description

technical field [0001] The invention relates to a high voltage metal oxide semiconductor transistor (High Voltage Metal Oxide Semiconductor, HVMOS) and a semiconductor device integrating HVMOS and CMOS. Background technique [0002] Complementary metal oxide semiconductor transistor (CMOS, Complementary Metal Oxide Semiconductor) devices are widely used in the field of microelectronics. Typically used in logic devices, memories, etc. In addition to CMOS, many high-voltage semiconductor transistors that can withstand voltages higher than CMOS are also widely used in the field of microelectronics industry. The most common ones are various types of laterally diffused metal oxide semiconductor transistors (LDMOS, Laterally Diffused Metal Oxide Semiconductor), in addition to LDMOS, there are extended drain metal oxide semiconductor transistors (EDMOS, ExtendedDrain Metal Oxide Semiconductor), Double Diffused Drain Metal Oxide Semiconductor Transistor (DDD-MOS, Double Diffused D...

AI Technical Summary

Problems solved by technology

Due to the long channel of HVMOS, the parasitic capacitance is large, such HVMOS needs to consume a lot of energy to drive, and the speed of turning on and off is also very slow, so the switching frequency is very low, such as 300 kHz

On the other hand, the long channel of HVMOS makes the channel resistance large and the unit area also increases. The HVMOS with the same on-resistance design occupies a large chip area.

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