Thermoelectric module and package thereof

A technology of thermoelectric and transducer elements, which is applied in thermoelectric device components, manufacturing/processing of thermoelectric devices, thermoelectric device node lead-out materials, etc., and can solve the problem of wire bonding strength offset, damage, and insufficient thermoelectric transduction modules etc., to achieve the effect of reducing the resistance of wiring, good bonding strength, and excellent wettability

Inactive Publication Date: 2008-07-30
KYOCERA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in conventional thermoelectric transducer modules, there are insufficient thermoelectric transducer modules in reliability tests such as impact, energization cycle tests, and high-temperature operation.
Defects in these reliability tests are caused by various factors such as deterioration of the thermoelectric transducer itself, deterioration of the junction between the thermoelectric transducer and the wiring conductor, and deterioration of the connection between the thermoelectric transducer module and the outside.
[0022] In the connection between the thermoelectric transducer module and the outside, there are types in

Method used

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  • Thermoelectric module and package thereof
  • Thermoelectric module and package thereof
  • Thermoelectric module and package thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0150] Example 1

[0151] (Creation of thermoelectric transducer elements)

[0152] First, make various N-type and P-type thermoelectric materials. The production method is as follows: prepare Bi, Te, Sb, Se metal powder with a purity of 99.99% or more and SbI as a dopant for thermoelectric energy conversion elements 3 Powder and SbBr 3 powder. As a thermoelectric material for N type, with Bi 2 Te 2.85 Se 0.15 The composition is basic, and the amount of dopant is adjusted in order to adjust the specific resistance.

[0153] In addition, P-type thermoelectric materials are made of Bi x Sb 2-x Te 3 For the basics, change x from 0.3 to 0.7 to adjust the specific resistance.

[0154] (a) Preparation of sintered body

[0155] After the raw materials are weighed to the required composition, they are filled into a crucible made of carbon and sealed with a lid. Put it into a quartz tube, perform vacuum replacement, and make a molten alloy at 800°C for 5 hours in an argon atmosphere.

[01...

Example Embodiment

[0188] [Example 2]

[0189] The initial raw materials are prepared by Bi 2 Te 2.85 Se 0.15 A thermoelectric transducer element 2 composed of a sintered body. The shape is a quadrangular prism, the size is 0.6mm in length, 0.6mm in width and 1mm in height. In addition, as the supporting substrate 1, alumina having a size of 6 mm×8 mm was prepared.

[0190] The wiring conductor 3 of Cu is produced on the supporting substrate 1 by a plating-etching method. A coating layer 7 of Au is formed on the surface.

[0191] A solder paste composed of solder 6 such as Au-Sn is printed on the wiring conductor 3a of the lower supporting substrate 1a, and thermoelectric transducer elements 2 are arranged on the wiring conductor 3a. The thermoelectric transducer 2 is heated from the opposite surface of the lower supporting substrate 1a to fix the thermoelectric Transduction element 2. The number of thermoelectric transducer elements 2 is the same number of N-type thermoelectric transducer elements ...

Example Embodiment

[0200] [Example 3]

[0201] Except for changing the composition of the solder of the connection lead, a thermoelectric transducer module was produced in the same manner as in Example 2.

[0202] Place the obtained thermoelectric transducer module in a high temperature atmosphere of 170°C, and measure the resistance change (ΔR) after 100 hours by the AC 4-terminal method. If the ΔR exceeds 5%, it is considered as unqualified, and if 5% or less is considered to be qualified. ○.

[0203] [table 3]

[0204] Sample

[0205] *Outside the scope of the present invention

[0206] Sample Nos. 1 to 4 and 10 to 16 in which the Sn content is in the range of 12% by weight or more and 40% by weight or less have good resistance changes of 5% or less. Among them, sample Nos. 1 to 4, 10 to 12, and 14 to 16 in which the porosity of the thermoelectric transducer element is 10% or less have a resistance change of 3% or less, which is particularly excellent in all evaluations within the error...

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Abstract

A thermoelectric transducer module and its package, the thermoelectric transducer module has a support substrate, a plurality of thermoelectric transducer elements arranged on the support substrate, wiring conductors electrically connecting the thermoelectric transducer elements, and the The external connection terminal to which the wiring conductor is electrically connected, wherein the cross-sectional shape of the wiring conductor is a rectangle or a trapezoidal shape in which the upper side on the element bonding surface side is longer than the lower side on the supporting substrate side. Accordingly, reliability can be improved.

Description

[0001] This application is a divisional application, the application number of its parent application: 200410089674.X filing date: 2004.10.29, the name of the invention: thermoelectric energy conversion module technical field [0002] The invention relates to a thermoelectric conversion module suitable for temperature control, low-temperature heat insulation and power generation and its package. Background technique [0003] A thermoelectric transducer element utilizes the Peltier effect in which one end generates heat and the other end absorbs heat when a current flows through a PN junction composed of a P-type semiconductor and an N-type semiconductor. Its modularized thermoelectric transducer module can perform precise temperature control, and is small in size and simple in structure. Therefore, it is expected to be widely used in CFC-free cooling devices, photodetection devices, electronic cooling devices such as semiconductor manufacturing devices, and temperature contr...

Claims

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Application Information

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IPC IPC(8): H01L35/08H01L35/10C23C30/00H01L35/16H01L35/32H01L35/34
Inventor 田岛健一田中广一
Owner KYOCERA CORP
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