Design method of semiconductor diode both-end pumping high power UV laser

A technology of ultraviolet laser and design method, which is applied to lasers, laser parts, phonon exciters, etc., to achieve the effects of good beam quality, good mode matching, and reduced coupling loss

Inactive Publication Date: 2008-07-30
SUZHOU DELPHI LASER
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Problems solved by technology

At present, many colleges and research institutes in China have carried out research on high-power ultraviolet lasers, but they are still in the initial stage. So far, commercial ultraviolet lasers that can be used in industrial processing have basically not been developed. The demand for high-power ultraviolet lasers Basically rely

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  • Design method of semiconductor diode both-end pumping high power UV laser
  • Design method of semiconductor diode both-end pumping high power UV laser

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Embodiment Construction

[0023] The invention adopts semiconductor diode double-terminal pumping laser crystal mode, utilizes intracavity frequency doubling technology, realizes the conversion of 1064nm fundamental frequency light to 532nm frequency doubling light, and then obtains 355nm ultraviolet through the sum frequency of 1064nm fundamental frequency light to 532nm frequency doubling light laser. The output laser has excellent beam quality.

[0024] The principle shown in Figure 1 uses two semiconductor diodes (1, 9) to form a double-ended pumping mode to pump the laser crystal, wherein the semiconductor diode 1 outputs 808nm pump light through two aspheric lenses (2, 3) The formed aspheric optical coupling system and lens 4 are coupled into the laser crystal 5, and another semiconductor diode 9 outputs 808nm pump light through the aspheric optical coupling system and lens 6 formed by two aspheric lenses (8,7). Coupled into the laser crystal 5, the lens 4 and the lens 6 make the laser crystal h...

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Abstract

The invention provides a design method of a semiconductor diode double-end-pumped high-power UV laser, which comprises following steps: constituting a double-end-pumped laser crystal by using two semiconductor diodes; outputting a pumped beam with 808 nm; coupling the pumped beam by an aspherical optical coupling system and a lens to a laser crystal to generate a laser beam with 1064 nm; oscillating the laser beam in a resonant cavity consisting of five planar mirrors; modulating with Q switch; converting the modulated fundamental frequency light with 1,064 nm into a frequency-doubled light with 532 nm by a frequency-doubling crystal; mixing the unconverted fundament frequency light with 1,064 nm with the frequency-doubled light with 532 nm by a frequency-tripling crystal to obtain a UV laser with 355 nm; and outputting the UV laser from a surface of the frequency-tripling crystal cut by Brewster angle. According to the scheme, the laser cavity has the advantages of large mode volume, smaller laser spot at the frequency-doubling crystal, greatly reducing intracavity loss by cutting the frequency-tripling crystal with Brewster angle and high power laser output.

Description

technical field [0001] The invention relates to solid-state laser technology, in particular to a design method for a semiconductor diode double-end pumped high-power ultraviolet laser. Background technique [0002] Ultraviolet lasers have short output wavelengths, concentrated energy, and high resolution. The focus point can be as small as several microns, and they have broad application prospects in the fields of micromachining of precision materials, ultraviolet curing, and photolithography. Semiconductor diode-pumped ultraviolet lasers have many advantages such as good beam quality, good power stability, high reliability, convenient use, and small size. In recent years, the use of nonlinear frequency conversion technology to obtain high-power ultraviolet laser output has become a research hotspot in the field of laser technology. At present, the global demand for all-solid-state ultraviolet lasers is increasing, and the application fields are expanding. [0003] The rea...

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Application Information

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IPC IPC(8): H01S3/0941H01S3/05H01S3/16H01S3/109H01S3/00
Inventor 赵裕兴李立卫吕楠楠
Owner SUZHOU DELPHI LASER
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