Design method of semiconductor diode both-end pumping high power UV laser
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- SUZHOU DELPHI LASER
- Publication Date
- 2008-07-30
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to solid-state laser technology, in particular to a design method for a semiconductor diode double-end pumped high-power ultraviolet laser. Background technique
[0002] Ultraviolet lasers have short output wavelengths, concentrated energy, and high resolution. The focus point can be as small as several microns, and they have broad application prospects in the fields of micromachining of precision materials, ultraviolet curing, and photolithography. Semiconductor diode-pumped ultraviolet lasers have many advantages such as good beam quality, good power stability, high reliability, convenient use, and small size. In recent years, the use of nonlinear frequency conversion technology to obtain high-power ultraviolet laser output has become a research hotspot in the field of laser technology. At present, the global demand for all-solid-state ultraviolet lasers is increasing, and the application fields are expanding.
[0003] The rea...