Selection of wavelenghts for end point in a time division multiplexed process

A time-division multiplexing and process technology, applied in metal material coating process, process for producing decorative surface effects, decorative arts, etc., can solve the problem of not providing advantages and so on

Inactive Publication Date: 2008-08-20
UNAXIS USA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] None of the prior art offers the advantages accompanying the present invention

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  • Selection of wavelenghts for end point in a time division multiplexed process
  • Selection of wavelenghts for end point in a time division multiplexed process
  • Selection of wavelenghts for end point in a time division multiplexed process

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Embodiment Construction

[0053] We disclose an apparatus for detecting transitions between different materials in a time division multiplexing (TDM) process by analyzing the intensity of at least one wavelength region emitted by a plasma without using synchronized triggering events.

[0054] These wavelength regions are chosen to reduce the wide variations in signal intensity that occur during a series of alternating etch and deposition steps. Over a small wavelength range, there is no main emission line and the plasma background emission is almost constant. Thus, the ratio of two adjacent wavelength regions (at 440 nm and 443 nm in this example) has a value close to 1 when no etching occurs. This is true both in the deposition and etching steps, provided the wavelength is carefully chosen. Therefore, as the process alternates between deposition and etch steps, the value of this ratio changes only slightly and remains close to a value equal to one. By displaying the ratio of the two wavelength regio...

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Abstract

The present invention provides a method for establishing endpoint during an alternating cyclical etch process or time division multiplexed process. A substrate is placed within a plasma chamber and subjected to an alternating cyclical process having an etching step and a deposition step. A variation in plasma emission intensity is monitored using known optical emission spectrometry techniques. A first wavelength region is selected based on a plasma emission from an etch by product and a second wavelength region is selected based on a plasma emission from a plasma background. A ratio of the first wavelength region to the second wavelength region is computed and used to adjust the monitoring of an attribute of a signal generated from the time division multiplex process. The alternating cyclical process is discontinued when endpoint is reached at a time that is based on the monitoring step.

Description

[0001] Cross References to Related Applications [0002] This application is related to, and claims priority to, the application entitled "Envelope Follower End Point Detection in Time Division Multiplexed Processes," filed May 9, 2003. Network Follower Endpoint Detection), commonly owned US Provisional Patent Application Serial No. 60 / 469,333, which is hereby incorporated by reference. This application is Co-Pending Application Serial No. 10 / 2004, entitled "Envelope Follower End Point Detection in Time Division Multiplexed Processes" (Envelope Follower End Point Detection in Time Division Multiplexing Process) filed May 6, 2004 841,818, the contents of which are hereby incorporated. technical field [0003] The present invention relates generally to the field of semiconductor wafer processing. More specifically, the present invention relates to determining the endpoint of an etch process during a time division multiplex etch and deposition process. Background of the inven...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/3065B81C1/00H01L21/66G01L21/30
CPCG01N21/73B81C1/00579H01J37/32935H01J37/32963H01L22/26
Inventor 大卫·约翰逊鲁塞尔·韦斯特曼
Owner UNAXIS USA
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