Single chip radio-frequency power amplifier

Abstract

Disclosed is a singlechip radio frequency power amplifier. An input pole which works in A category and is used to amplify input signals, a push pole which works in AB category and is connected with the input pole through a coupling capacitor to re-amplify the signals outputted from the input pole, and an output pole which works in C category and is connected with the push pole through a coupling capacitor to amplify and output the signals outputted from the push pole are integrated on the singlechip of the power amplifier; meanwhile a signal input solder pad, a first gate bias voltage input solder pad and a first earthing solder pad, which are connected with the input pole, a second gate bias voltage input solder pad and a second earthing solder pad which are connected with the push pole, and a signal output solder pad, a third gate bias voltage input solder pad and a third earthing solder pad, which are connected with the output pole, are arranged on the singlechip. With such a three-stage cascade structure, the power amplifier can be amplified in overall power, improved in stability and increased in efficiency.

Description

technical field [0001] The invention relates to a single-chip radio frequency power amplifier. Background technique [0002] With the development of wireless technology, users tend to choose mobile devices with smaller area and lower price, and the design of RF IC is also progressing in these two directions. [0003] In the existing walkie-talkie applications, RF power amplifiers have always been implemented on printed circuit boards with discrete components. This solution has the following shortcomings: [0004] 1: The area of ​​the printed circuit board is relatively large; 2: It is very troublesome to debug, and it is easy to oscillate; 3: If you want to achieve 4W or higher output power, you need to buy expensive RF power amplifier modules, and the cost is relatively high; 4: In the commercial RF power amplifier chip market, not many can be used in the walkie-talkie frequency band, and the gain is not high, generally 25dB to 30dB, and an additional gain amplifier driver...

AI Technical Summary

Problems solved by technology

[0004] 1: It occupies a relatively large area of ​​the printed circuit board; 2: Debugging is very troublesome, and it is easy to oscillate; 3: If you want to achieve an output power of 4W or higher, you need to purchase an expensive RF power amplifier module, and the cost is relatively high; 4: In the commercial RF power amplifier chip market, there are not many that can be used in the frequency band of walkie-talkies, and the gain is not high, generally 25dB to 30dB, and it is necessary to add an additional gain amplifier driver stage to be used in walkie-talkies

[0005] In addition, the existing power amplifier chips implemented by expensive processes such as gallium arsenide and silicon germanium have certain advantages in performance, but the price limits the scope of application.

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