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Ultraviolet detector

A detector and ultraviolet light technology, which is applied in the field of fast-response ultraviolet light detectors to achieve the effects of simple structure and simple preparation method

Inactive Publication Date: 2008-09-10
CHINA UNIV OF PETROLEUM (BEIJING)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

So far there is no report on the use of silica materials as UV light detectors

Method used

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Examples

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Embodiment 1

[0040] This embodiment of the present invention provides an open-path ultraviolet light detector, which is combined below image 3 The open-path ultraviolet light detector of the present invention is described in detail. image 3 is an open circuit according to an embodiment of the present invention

[0041] A 10mm×5mm silicon dioxide crystal with a orientation surface beveled at 10 degrees and a thickness of 0.5mm is used as the photosensor chip 1, and the upper surface of 10mm×5mm is used as the incident surface of the light to be detected, and the bevel direction of the surface is parallel to The edge of 5mm, the surface polished crystal is used conventional pulse laser film forming process, and the area is 5mm×1mm, and the thickness is 10 nanometers of platinum on both sides of the silicon dioxide single crystal of 5mm×10mm by mask method. The film is used as the first electrode 2 and the second electrode 3, and 0.2mm copper wire is used as the first electrode lead 4 and...

Embodiment 2

[0044]This embodiment of the present invention provides an open-path ultraviolet light detector. The preparation process is the same as that of Example 1, except that a silicon dioxide single wafer with an oblique cut of 45 degrees and an orientation of is selected.

Embodiment 3

[0046] This embodiment of the present invention provides an open-path ultraviolet light detector. The preparation process is the same as in Example 1, except that a silicon dioxide single crystal thin film with a thickness of 1 nanometer is used instead of a silicon dioxide single wafer.

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Abstract

The invention provides an ultraviolet detector, at least comprising a light sensor which at least comprises a silicon dioxide light sensor chip, two electrodes and two output terminals, wherein, the two electrodes are arranged at one side of the silicon dioxide light sensor chip; two output terminals are respectively connected with the two electrodes; the ultraviolet detector also comprises a shell in which the light sensor is arranged. The ultraviolet detector of the invention is made of normal material silicon dioxide and has fast response speed and simple structure.

Description

technical field [0001] The present application relates to an ultraviolet light detector, in particular to a fast-response ultraviolet light detector made of silicon dioxide material. Background technique [0002] The detection of laser energy, power, pulse width and waveform is not only very important for laser devices and basic research, but also has a very wide range of uses in military, national defense, agriculture, resource mining, transportation, etc. Although people have researched and developed various types of laser detectors such as pyroelectric, photoelectric, and pyroelectric, the exploration of new ultraviolet light detectors is still one of the research hotspots. [0003] Chinese patent application CN1874009A discloses a diamond film ultraviolet light detector. see figure 1 and figure 2 , the preparation method includes the following process steps: using a <100> silicon wafer as a substrate, ultrasonic cleaning with HF acid for 5-15 minutes to remove ...

Claims

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Application Information

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IPC IPC(8): G01J1/42G01J11/00
Inventor 刘昊赵嵩卿周娜赵卉高磊王爱军赵昆
Owner CHINA UNIV OF PETROLEUM (BEIJING)
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